Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc.com
Spring 2006 Skyworks Proprietary Information. Products and product information are subject to change without notice.
648
AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF:
GaAs IC Control FET Series 300 kHz–2.5 GHz
DATA SHEET
Features
●
Low-cost SOT-23 package
●
Series or shunt configuration
●
Low DC current drain
●
Ideal switch building blocks
●
Pin diode replacements
●
High-power antenna switches
●
Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C
per JEDEC J-STD-020
Description
This group of GaAs control FETs can be used in both series and
shunt configurations. They incorporate on-chip circuitry that
eliminates the need for extra bias components and minimizes
power drain to typically 25 W. These features make the devices
ideal replacements for PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due to
package parasitics. They can be tuned out in narrow band appli-
cations as shown in the circuit examples on the following pages.
Skyworks offers lead (Pb)-free, RoHS (Restriction of
Hazardous Substances)-compliant packaging.
NEW
Drain (D)
Source (S)
Gate (G)
1
2
3
Pin Out
Part Number(1)
Frequency
RON (
)(2)
Insertion Loss (dB)(3, 4)
COFF (pF)
(5)
Isolation (dB)(4)
P-1 dB (W)
(GHz)
Typ.
Max.
Series
Shunt
Typ.
Max.
Series
Shunt
Typ.
AF002C1-39
300 kHz–0.5 GHz
6.4
9
0.5
0.1
0.13
0.25
25
12
0.5
300 kHz–1.0 GHz
6.4
9
0.6
0.15
0.13
0.25
17
8
1
300 kHz–2.5 GHz
6.4
9
0.7
0.2
0.13
0.25
13
3
1
AF002C4-39
300 kHz–0.5 GHz
0.8
1.1
0.2
0.15
1.1
1.5
11
15
6
300 kHz–1.0 GHz
0.8
1.1
0.25
1.1
1.5
6
9
7
300 kHz–2.5 GHz
0.8
1.1
0.3
2
1.1
1.5
3
4
7
Electrical Specifications at 25 °C (0, -5 V)
1. All measurements made in a 50
system, unless otherwise specified.
2. RON - resistance in
in low impedance state when “0” V is applied to gate (G).
3. Insertion loss changes by 0.003 dB/°C.
4. Insertion loss and isolation typical values.
5. COFF - capacitance (pF) in high impedance state when -5 V is applied to gate (G).