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参数资料
| 型号： | AF1332NUA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-323, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 263K |
| 代理商： | AF1332NUA |
AF1332N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Oct 15, 2004
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±6
V
TA=25C
600
ID
Continuous Drain Current (Note 1)
TA=70C
470
mA
IDM
Pulsed Drain Current (Note 2, 3)
2.5
A
Total Power Dissipation
TA=25C
0.35
W
PD
Linear Derating Factor
0.003
W/
oC
TSTG
Storage Temperature Range
-55 to +150
oC
TJ
Operating Junction Temperature Range
-55 to +150
oC
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-a
Thermal Resistance Junction-Ambient (Note 1)
Max.
360
C/W
Electrical Characteristics at T
A=25
oC (unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
20
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.02
-
V/
oC
VGS=4.5V, ID=600mA
-
600
RDS(ON)
Static Drain-Source
On-Resistance
VGS=2.5V, ID=400mA
-
850
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.2
V
gfs
Forward Transconductance
VDS=5V, ID=600mA
-
1
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=20V, VGS=0V
-
1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=16V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=±6V
-
±10
uA
Qg
Total Gate Charge (Note 3)
-
1.3
2
Qgs
Gate-Source Charge
-
0.3
-
Qgd
Gate-Drain (“Miller”) Charge
ID=600mA,
VDS=16V,
VGS=4.5V
-
0.5
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
21
-
tr
Rise Time
-
53
-
td(off)
Turn-Off Delay Time
-
100
-
tf
Fall-Time
VDS=10V,
ID=600mA,
RG=3.3, VGS=5V
RD=16.7
-
125
-
ns
Ciss
Input Capacitance
-
38
60
Coss
Output Capacitance
-
17
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=10V,
f=1.0MHz
-
12
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDS
Forward On Voltage (Note 3)
IS=300mA, VGS=0V
-
1.2
V
Note 1: Surface mounted on FR4 board, t ≤ 10 sec.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
相关PDF资料 |
PDF描述 |
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| AF1332NULA | 600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AF1332NUL | 600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AF1333PU | 550 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AF1333PUA | 550 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AF1332PNU | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF1332PNUA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF1332PNUL | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF1332PNULA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF1333P | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:P-Channel Enhancement Mode Power MOSFET |
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