参数资料
型号: AF2302NWA
英文描述: 20V N-Channel Enhancement Mode MOSFET
中文描述: 20V的N沟道增强型MOS管
文件页数: 1/4页
文件大小: 132K
代理商: AF2302NWA
AF2302N
20V N-Channel Enhancement Mode MOSFET
Features
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- Compact and low profile SOT-23 package
Pin Assignments
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/4
3
2
1
(Top View)
1. G
2. S
3. D
Product Summary
V
DS
= 20V
R
DS (on)
, V
GS
@4.5V, I
DS
@3.6A =65m
.
R
DS (on)
, V
GS
@2.5V, I
DS
@3.1A =95m
.
Pin Descriptions
Pin
No.
Name
1
G
2
S
3
D
Pin
Description
Gate
Source
Drain
Ordering information
A X 2302N X X X
PN
Package
Feature
F :MOSFET
W: SOT23
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
S
G
D
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