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参数资料
| 型号： | AF4362NS |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 379K |
| 代理商： | AF4362NS |
AF4362N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
V
TA=25C
18
ID
Continuous Drain Current (Note 1)
TA=70C
15
A
IDM
Pulsed Drain Current (Note 2)
80
A
Total Power Dissipation
2.5
W
PD
Linear Derating Factor
TA=25C
0.02
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
50
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
30
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.01
-
V/
oC
VGS=10V, ID=18A
-
5
VGS=4.5V, ID=12A
-
6
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=2.5V, ID=6A
8
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
-
1.2
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
47
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=30V, VGS=0V
-
1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
59
95
Qgs
Gate-Source Charge
-
10
-
Qgd
Gate-Drain (“Miller”) Charge
ID=18A,
VDS=24V,
VGS=4.5V
-
23
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
16
-
tr
Rise Time
-
12
-
td(off)
Turn-Off Delay Time
-
96
-
tf
Fall-Time
VDS=15V,
ID=1A,
RG=3.3, VGS=10V
RD=15
-
30
-
ns
Ciss
Input Capacitance
-
5080
8100
Coss
Output Capacitance
-
660
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
400
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=18A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
-
43
-
ns
Qrr
Reverse Recovery Charge
IS=18A, VGS=0V,
dl/dt=100A/s
-
39
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AF4362NSA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF4362NSL | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF4362NSLA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF-43-PK | 制造商:Brady Corporation 功能描述: |
| AF4407 | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:P-Channel 30-V (D-S) MOSFET |
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