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参数资料
| 型号： | AF4409PSLA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 9.5 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 498K |
| 代理商： | AF4409PSLA |
AF4409P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.2 Aug 25, 2005
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±8
V
TA=25C
-9.5
ID
Continuous Drain Current (Note 1)
TA=70C
-7.6
A
IDM
Pulsed Drain Current (Note 2)
-76
A
Total Power Dissipation
2.5
W
PD
Linear Derating Factor
TA=25C
0.02
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
50
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-20
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=-1mA
-
-0.037
-
V/
oC
VGS=-4.5V, ID=-9.5A
-
20
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=-2.5V, ID=-6.0A
-
35
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-
-1
V
gfs
Forward Transconductance
VDS=-10V, ID=-9.5A
-
28
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=-20V, VGS=0V
-
-1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=-16V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±8V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
30
-
Qgs
Gate-Source Charge
-
6
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-9.5A,
VDS=-10V,
VGS=-5V
-
3.5
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
26
-
tr
Rise Time
-
500
-
td(off)
Turn-Off Delay Time
-
70
-
tf
Fall-Time
VDS=-10V,
ID=-9.5A,
RG=6, VGS=-4.5V
RD=1.05
-
300
-
ns
Ciss
Input Capacitance
-
2158
-
Coss
Output Capacitance
-
845
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
f=1.0MHz
-
230
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current (Body
Diode)
VD=VG=0V, VS=-1.2V
-
-2.08
A
VSD
Forward On Voltage (Note 3)
TJ=25
oC, I
S=-2.5A,
VGS=0V
-
-1.2
V
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
相关PDF资料 |
PDF描述 |
|---|---|
| AF4409PSA | 9.5 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AF4410NSA | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AF4410NS | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AF4410NSLA | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AF4410NSL | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AF4410N | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF4410NS | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF4410NSA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF4410NSL | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF4410NSLA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
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