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参数资料
| 型号： | AF4835PSA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 463K |
| 代理商： | AF4835PSA |
AF4835P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.3 Aug 18, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
TA=25C
-8
ID
Continuous Drain Current (Note 1)
TA=70C
-6
A
IDM
Pulsed Drain Current (Note 2, 3)
-50
A
Total Power Dissipation
2.5
W
PD
Linear Derating Factor
TA=25C
0.02
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient
Max.
50
C/W
Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-30
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=-1mA
-
-0.04
-
V/
oC
VGS=-10V, ID=-8A
-
15
20
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=-4.5V, ID=-5A
-
26
32
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-15V, ID=-8A
-
20
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=-30V, VGS=0V
-
-1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
36
-
Qgs
Gate-Source Charge
-
5.5
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-4.6A,
VDS=-15V,
VGS=-10V
-
3.5
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
12
-
tr
Rise Time
-
8
-
td(off)
Turn-Off Delay Time
-
75
-
tf
Fall-Time
VDS=-15V,
ID=-1A,
RG=6, VGS=-10V
RD=15
-
40
-
ns
Ciss
Input Capacitance
-
1530
-
Coss
Output Capacitance
-
900
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
f=1.0MHz
-
280
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=-2.1A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time (Note 3)
-
55
-
ns
Qrr
Reverse Recovery Charge
IS=-5A, VGS=0V,
dl/dt=100A/s
-
83
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; t<10sec; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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| AF4835PSL | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:P-Channel Enhancement Mode Power MOSFET |
| AF4835PSLA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:P-Channel Enhancement Mode Power MOSFET |
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