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参数资料
| 型号： | AF8510CS |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 317K |
| 代理商： | AF8510CS |
AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Nov 14, 2005
3/8
P-CH Electrical Characteristics at T
J=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
-30
-
V
BV
DSS /
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
-0.023
-
V/
oC
VGS=-10V, ID=-5A
-
55
VGS=-4.5V, ID=-3A
-
90
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
4.9
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=-30V, VGS=0V
-
-1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
9
15
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-5.3A,
VDS=-24V,
VGS=-4.5V
-
6
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
10
-
tr
Rise Time
-
8
-
td(off)
Turn-Off Delay Time
-
25
-
tf
Fall-Time
VDS=-15V,
ID=1A,
RG=3.3, VGS=-10V
RD=15
-
13
-
ns
Ciss
Input Capacitance
-
580
930
Coss
Output Capacitance
-
180
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=1.7A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time)
-
21
-
ns
Qrr
Reverse Recovery Charge
IS=-5.3A, VGS=0V,
dl/dt=100A/s
-
17
-
nC
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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| AF8510CSA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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