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参数资料
| 型号： | AF85N03D |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 415K |
| 代理商： | AF85N03D |
AF85N03
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
TC=25C
75
ID
Continuous Drain Current, VGS=4.5V
TC=100C
55
A
IDM
Pulsed Drain Current (Note 1)
350
A
Total Power Dissipation
TC=25C
107
W
PD
Linear Derating Factor
0.7
W/C
TSTG
Storage Temperature Range
-55 to 175
C
TJ
Operating Junction Temperature Range
-55 to 175
C
Thermal Data
Symbol
Parameter
Maximum
Units
RθJC
Thermal Resistance Junction-Case
Max.
1.4
C/W
RθJA
Thermal Resistance Junction- Ambient
Max.
110
C/W
Electrical Characteristics (T
J=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=1mA
-
0.018
-
V/C
VGS=10V, ID=45A
-
6
RDS(ON)
Static Drain-Source
On-Resistance (Note 2)
VGS=4.5V, ID=30A
-
10
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
32
-
S
Drain-Source Leakage
Current(TJ=25C)
VDS=30V, VGS=0V
-
1
IDSS
Drain-Source Leakage
Current(TJ=175C)
VDS=24V, VGS=0V
-
500
uA
IGSS
Gate Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 2)
-
33
52
Qgs
Gate-Source Charge
-
7.5
-
Qgd
Gate-Drain (“Miller”) Charge
ID=30A
VDS=24V
VGS=4.5V
-
24
-
nC
td(on)
Turn-On Delay Time (Note 2)
-
11.2
-
tr
Rise Time
-
77
-
td(off)
Turn-Off Delay Time
-
35
-
tf
Fall-Time
VDS=15V
ID=30A
RG=3.3, VGS=10V
RD=0.5
-
67
-
nS
Ciss
Input Capacitance
-
2700
4200
Coss
Output Capacitance
-
550
-
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=25V,
f=1.0MHz
-
380
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 2)
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
-
28
-
ns
Qrr
Reverse Recovery Charge
IS=30A, VGS=0V,
dl/dt=100A/s
-
10
-
nC
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
相关PDF资料 |
PDF描述 |
|---|---|
| AF86N03D | 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AF86N03DA | 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AF8958CN | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AF8958CNLA | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AF8958CNA | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AF85N03DA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF86-XX | 制造商:ATM 制造商全称:ATM 功能描述:AV/AF86 ATTENUATOR |
| AF87-XX | 制造商:ATM 制造商全称:ATM 功能描述:AV/AF87 ATTENUATOR |
| AF87X-XX | 制造商:ATM 制造商全称:ATM 功能描述:AV/AF87 ATTENUATOR |
| AF88.0 | 制造商:Schneider Electric 功能描述:THERMAL UNIT |
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