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参数资料
| 型号： | AF8958CS |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SO-8 |
| 文件页数： | 3/9页 |
| 文件大小： | 716K |
| 代理商： | AF8958CS |
AF8958C
N and P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.2 Sep 13, 2005
3/9
Electrical Characteristics (T
J=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
N
-
6
-
td(on)
Turn-On Delay Time (Note 3)
P
-
10
-
N
-
5
-
tr
Rise Time
P
-
7
-
N
-
19
-
td(off)
Turn-Off Delay Time
P
-
27
-
N
-
5
-
tf
Fall-Time
N-Channel
VDS=15V, VGS=10V
ID=1A, RG=3.3,
RD=15
P-Channel
VDS=-15V, VGS=-10V
ID=-1A, RG=6,
RD=15
P
-
16
-
ns
N
-
645
1030
Ciss
Input Capacitance
P
-
460
730
N
-
150
-
Coss
Output Capacitance
P
-
180
-
N
-
95
-
Crss
Reverse Transfer Capacitance
N-Channel
VGS=0V, VDS=25V
f=1.0MHz
P-Channel
VGS=0V, VDS=-25V
f=1.0MHz
P
-
130
-
pF
N
-
1.6
2.5
Rg
Gate Resistance
f=1.0MHz
P
-
9
14
Source-Drain Diode
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
IS=1.7A, VGS=0V
N
-
1.2
VSD
Forward On Voltage (Note 3)
IS=-1.7A, VGS=0V
P
-
-1.2
V
N
-
16
-
trr
Reverse Recovery Time (Note 3)
P
-
21
-
ns
N
-
10
-
Qrr
Reverse Recovery Charge
N-Channel
IS=7A, VGS=0V
dl/dt=100A/s
P-Channel
IS=-5A, VGS=0V
dl/dt=-100A/s
P
-
18
-
nC
Note 1: Surface Mounted on 1 in
2 copper pad of FR4 board, t ≤ 10sec; 90C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us duty cycle < 2%.
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