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参数资料
| 型号： | AF9503PS |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 40 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 205K |
| 代理商： | AF9503PS |
AF9503P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev.1.0 Dec 13, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-40
VGS
Gate-Source Voltage
±25
V
TA=25C
-6
ID
Continuous Drain Current (Note 1)
TA=70
oC
-4.8
A
IDM
Pulsed Drain Current (Note 2)
-30
A
Total Power Dissipation
TA=25
oC
2.5
W
PD
Linear Derating Factor
0.02
W/
oC
TSTG
Storage Temperature Range
-55 to 150
oC
TJ
Operating Junction Temperature Range
-55 to 150
oC
Thermal Data
Symbol
Parameter
Value
Units
RθJA
Thermal Resistance Junction-Ambient (Note 1)
Max.
50
oC /W
Electrical Characteristics (T
J=25C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-40
-
V
BVDSS / TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=-1mA
-
-0.03
-
V/
oC
VGS=-10V, ID=-6A
-
40
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=-4.5V, ID=-4A
-
60
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
10
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=-40V, VGS=0V
-
-1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=-32V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
19
30
Qgs
Gate-Source Charge
-
5
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-6A,
VDS=-32V,
VGS=-4.5V
-
8
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
12
-
tr
Rise Time
-
7
-
td(off)
Turn-Off Delay Time
-
68
-
tf
Fall-Time
VDS=-20V,
ID=-1A,
RG=3.3, VGS=-10V
RD=20
-
38
-
ns
Ciss
Input Capacitance
-
1600
2560
Coss
Output Capacitance
-
240
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-25V,
f=1.0MHz
-
190
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage (Note 3)
IS=-2A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time (Note 3)
-
37
-
ns
Qrr
Reverse Recovery Charge
IS=-6A, VGS=0V,
dl/dt=100A/s
-
54
-
nC
Note 1: Surface Mounted on 1 in
2 copper pad of FR4 board; 125C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us, duty cycle < 2%.
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