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参数资料
| 型号： | AF9902MS |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 4.3 A, 30 V, 0.04 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 799K |
| 代理商： | AF9902MS |
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 22, 2005
3/8
Electrical Characteristics (T
J=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
N
-
8
-
td(on)
Turn-On Delay Time (Note 3)
P
-
8
-
N
-
9
-
tr
Rise Time
P
-
9
-
N
-
17
-
td(off)
Turn-Off Delay Time
P
-
25
-
N
-
5
-
tf
Fall-Time
N-Channel
VDS=15V, VGS=5V
ID=1A, RG=3.3,
RD=15
P-Channel
VDS=-15V, VGS=-5V
ID=-1A, RG=3.3,
RD=15
P
-
14
-
ns
N
-
630
1000
Ciss
Input Capacitance
P
-
690
1100
N
-
140
-
Coss
Output Capacitance
P
-
170
-
N
-
65
-
Crss
Reverse Transfer Capacitance
N-Channel
VGS=0V, VDS=25V
f=1.0MHz
P-Channel
VGS=0V, VDS=-25V
f=1.0MHz
P
-
75
-
pF
Source-Drain Diode
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
IS=1.2A, VGS=0V
N
-
1.2
VSD
Forward On Voltage (Note 3)
IS=-1.2A, VGS=0V
P
-
-1.2
V
N
-
17
-
trr
Reverse Recovery Time
P
-
25
-
ns
N
-
9
-
Qrr
Reverse Recovery Charge
N-Channel
IS=4A, VGS=0V
dl/dt=100A/s
P-Channel
IS=-3A, VGS=0V
dl/dt=-100A/s
P
-
20
-
nC
Note 1: Surface Mounted on 1 in
2 copper pad of FR4 board; t ≤10sec; 186C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us, duty cycle < 2%.
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相关代理商/技术参数 |
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| AF9903M | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:2N and 2P-Channel Enhancement Mode Power MOSFET |
| AF9926N | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF9926NS | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF9926NSA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
| AF9926NSL | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:N-Channel Enhancement Mode Power MOSFET |
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