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参数资料
| 型号： | AF9928NTSLA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, TSSOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 463K |
| 代理商： | AF9928NTSLA |
AF9928N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 11, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
at TA=25C
5
ID
Drain Current (Note 1), at VGS=4.5V
at TA=70C
3.5
A
IDM
Pulsed Drain Current (Note 2)
25
A
Total Power Dissipation
1
W
PD
Linear Derating Factor
at TA=25C
0.008
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Value
Units
Rthj-a
Thermal Resistance Junction-Ambient (Note 1)
Max.
125
oC/W
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board, 208oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Electrical Characteristics at T
J=25C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
BVDSS /TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.02
-
V/
oC
VGS=4.5V, ID=5A
-
23
m
RDS(on)
Static Drain-Source On-Resistance
(Note 3)
VGS=2.5V, ID=2A
-
29
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
21
-
S
VDS=20V, VGS=0V,
TJ=25C
-
1
uA
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V,
TJ=70C
-
25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±10
uA
Qg
Total Gate Charge (Note 3)
-
15.9
-
nC
Qgs
Gate-Source Charge
-
1.5
-
nC
Qgd
Gate-Drain (“Miller”) Charge
ID=5A,
VDS=10V,
VGS=4.5V
-
7.4
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
6.2
-
ns
tr
Rise Time
-
9
-
ns
td(off)
Turn-Off Delay Time
-
30
-
ns
tf
Fall-Time
VDS=10V,
ID=1A,
RG=3.3, VGS=4.5V
RD=10
-
11
-
ns
Ciss
Input Capacitance
-
530
-
pF
Coss
Output Capacitance
-
245
-
pF
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=20V,
f=1.0MHz
-
125
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current (Body
Diode)
VD=VG=0V, VS=1.2V
-
0.83
A
VSD
Forward On Voltage (Note 3)
TJ=25C , IS=5A,
VGS=0V
-
1.2
V
Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.
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