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参数资料
| 型号： | AFM08P2-000 |
| 元件分类： | 功率晶体管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | DIE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 19K |
| 代理商： | AFM08P2-000 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chip
Features
s 24 dBm Output Power @ 18 GHz
s High Associated Gain, 8.5 dB @ 18 GHz
s High Power Added Efficiency, 20%
s Broadband Operation, DC–40 GHz
s 0.25
m Ti/Pd/Au Gates
s Passivated Surface
s Through-Substrate Via Hole Grounding
Description
The AFM08P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
m and a total
gate periphery of 800
m. The device has excellent gain
and power performance through 40 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. It employs
Ti/Pd/Au gate metallization and surface passivation to
ensure a rugged, reliable part. Through-substrate via holes
are incorporated into the chip to facilitate low inductance
grounding of the source for improved high frequency and
high gain performance.
AFM08P2-000
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)
VDS = 2 V, VGS = 0 V
175.0
265.0
360.0
mA
Transconductance (gm)
120.0
160.0
mS
Pinch-off Voltage (VP)
VDS = 5 V, IDS = 2.0 mA
1.0
3.0
5.0
-V
Gate to Drain
IGD = 800 A
8.0
12.0
-V
Breakdown Voltage (Vbgd)
Output Power at 1 dB
24.0
dBm
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)VDS = 5 V, IDS = 140 mA, F = 18 GHz
8.5
dB
Power Added Efficiency (
ηadd)
20.0
%
Output Power at 1 dB
23.0
dBm
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
VDS = 5 V, IDS = 140 mA, F = 30 GHz
4.5
dB
Power Added Efficiency (
ηadd)
10.0
%
Thermal Resistance (
ΘJC)
TBASE = 25°C
120.0
°C/W
Electrical Specifications at 25°C
0.395
mm
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
2 mA
Total Power Dissipation (PT)
1.4 W
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.
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