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参数资料
| 型号： | AFP02N8-000 |
| 厂商： | SKYWORKS SOLUTIONS INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | DIE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 23K |
| 代理商： | AFP02N8-000 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
General Purpose PHEMT Chip
Features
s Low Noise Figure, 1.25 dB @ 4 GHz
s High Associated Gain, 15.0 dB @ 4 GHz
s High MAG, > 18 dB @ 4 GHz
s 0.7
m Ti/Pd/Au Gates
s Passivated Surface
Description
The AFP02N8-000 general purpose PHEMT chip has
excellent gain and noise performance through X band,
making it suitable for a wide range of commercial and military
applications.The device employs 0.7
m Ti/Pd/Au gates and
surface passivation to ensure a rugged, reliable part.
AFP02N8-000
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)VDS = 2 V, VGS = 0 V
25.0
45.0
90.0
mA
Transconductance (gm)
VDS = 2 V, IDS = 15 mA
40.0
55.0
mS
Pinch-off Voltage (VP)
VDS = 2 V, IDS = 0.3 mA
-0.2
-0.6
-2.0
V
Gate to Source
IGS = -200 A
-4.0
-6.0
V
Breakdown Voltage (Vbgs)
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 4 GHz
1.25
1.75
dB
Associated Gain (GA)
14.0
15.0
dB
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 12 GHz
2.6
3.0
dB
Associated Gain (GA)
8.5
9.4
dB
Electrical Specifications at 25°C
78
50
400
50
20
125
350
D
S
GG
D
Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-3 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10
A
Total Power Dissipation (PT)
300 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
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