参数资料
型号: AG201-63
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: SMT, MO-203, SOT-363, 6 PIN
文件页数: 1/6页
文件大小: 555K
代理商: AG201-63
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 6 June 2005
AG201-63
InGaP HBT Gain Block
Product Information
Product Features
DC – 6000 MHz
+6.5 dBm P1dB at 900 MHz
+19 dBm OIP3 at 900 MHz
11 dB Gain at 900 MHz
Single Voltage Supply
Green SOT-363 SMT Pkg.
Internally matched to 50
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
The AG201-63 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG201-63 typically provides
11 dB gain, +19 dBm OIP3, and +6.5 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85
° C and is housed in a lead-
free/green/RoHS-compliant SOT-363 industry standard
SMT package.
The AG201-63 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT technology process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG201-63 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
RF IN
GND
RF OUT
GND
1
2
3
4
6
5
Function
Pin No.
Input
3
Output/Bias
6
Ground
1, 2, 4, 5
Specifications (1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
DC
6000
Test Frequency
MHz
900
Gain
dB
11.3
Input Return Loss
dB
25
Output Return Loss
dB
16
Output IP3 (2)
dBm
+19.1
Output IP2
dBm
+27
Output P1dB
dBm
+6.5
Noise Figure
dB
4.4
Test Frequency
MHz
1900
Gain
dB
10
11
12
Output IP3 (2)
dBm
+18.5
Output P1dB
dBm
+5.8
Device Voltage
V
4.0
Device Current
mA
20
1. Test conditions: T = 25 C, Supply Voltage = +5 V, Rbias = 49.9
, 50 System.
2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +125
°C
DC Voltage
+4.5 V
RF Input Power (continuous)
+10 dBm
Junction Temperature
+250
°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter
Units
Typical
Frequency
MHz
500
900
1900
2140
S21
dB
11.4
11.3
11
10.9
S11
dB
-30
-25
-20
-15
S22
dB
-16
Output P1dB
dBm
+6.5
+5.8
+5.1
Output IP3
dBm
+19.5
+19.1
+18.5
+18.2
Noise Figure
dB
4.3
4.4
4.6
Ordering Information
Part No.
Description
AG201-63*
InGaP HBT Gain Block
(lead-tin SOT-363 Pkg)
AG201-63G
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 Pkg)
AG201-63PCB
700 – 2400 MHz Fully Assembled Eval. Board
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
相关PDF资料
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