参数资料
型号: AG203-63G
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: GREEN, PLASTIC, MO-203, SOT-363, SMT, 6 PIN
文件页数: 3/5页
文件大小: 500K
代理商: AG203-63G
.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 3 of 5 August 2009
AG203-63
InGaP HBT Gain Block
Typical Device RF Performance (cont’d)
Supply Bias = +6 V, Rbias = 98
, Icc = 20 mA
Gain vs. Frequency
12
14
16
18
20
22
0
1
2
3
4
Frequency (GHz)
Ga
in
(
d
B
)
-40 C
+25 C
+85 C
Output IP3 vs. Frequency
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
OI
P
3
(dBm
)
-40 C
+25 C
+85 C
Output IP2 vs. Frequency
15
20
25
30
35
0
200
400
600
800
1000
Frequency (MHz)
OI
P
2
(dBm
)
-40c
+25c
+85c
P1dB vs. Frequency
-10
-5
0
5
10
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
P1
dB
(dB
m
)
-40 C
+25 C
+85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
N
F
(d
B
)
-40 C
+25 C
+85 C
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 198
, Icc = 20 mA
Gain vs. Frequency
12
14
16
18
20
22
0
1
2
3
4
Frequency (GHz)
Ga
in
(
d
B
)
-40 C
+25 C
+85 C
Output IP3 vs. Frequency
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
OI
P
3
(dBm
)
-40 C
+25 C
+85 C
Output IP2 vs. Frequency
15
20
25
30
35
0
200
400
600
800
1000
Frequency (MHz)
OI
P
2
(dBm
)
-40c
+25c
+85c
P1dB vs. Frequency
-10
-5
0
5
10
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
P1
dB
(dB
m
)
-40 C
+25 C
+85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
N
F
(d
B
)
-40 C
+25 C
+85 C
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