参数资料
型号: AG302-86
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: SMT, SOT-86, MICRO-X-4
文件页数: 1/6页
文件大小: 457K
代理商: AG302-86
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 6 June 2005
AG302-86
InGaP HBT Gain Block
Product Information
The Communications Edge TM
Product Features
x DC – 6000 MHz
x +13.5 dBm P1dB at 900 MHz
x +26 dBm OIP3 at 900 MHz
x 15.5 dB Gain at 900 MHz
x Single Voltage Supply
x Green SOT-86 SMT Package
x Internally matched to 50 :
Applications
x Mobile Infrastructure
x CATV / DBS
x W-LAN / ISM
x RFID
x Defense / Homeland Security
x Fixed Wireless
Product Description
The AG302-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG302-86 typically provides
15.5 dB gain, +26 dBm OIP3, and +13.5 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85
qC & is housed in a SOT-86
(micro-X) industry-standard SMT lead-free/green/RoHS-
compliant package.
The AG302-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG302-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
Function
Pin No.
Input
1
Output/Bias
3
Ground
2, 4
Specifications (1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
DC
6000
Test Frequency
MHz
900
Gain
dB
15.6
Input Return Loss
dB
20
Output Return Loss
dB
18
Output IP3 (2)
dBm
+25.9
Output IP2
dBm
+37
Output P1dB
dBm
+13.5
Noise Figure
dB
3.2
Test Frequency
MHz
1900
Gain
dB
13.3
14.3
15.3
Output IP3 (2)
dBm
+25.0
Output P1dB
dBm
+12.2
Device Voltage
V
4.23
Device Current
mA
35
1. Test conditions: 25 C, Supply Voltage = +5 V, Rbias = 22.1 , 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
qC
Storage Temperature
-55 to +125
qC
DC Voltage
+5 V
RF Input Power (continuous)
+10 dBm
Junction Temperature
+250
q C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter
Units
Typical
Frequency
MHz
500
900
1900
2140
S21
dB
16.0
15.6
14.3
14.0
S11
dB
-19
-20
-21
-25
S22
dB
-21
-18
-13
-12
Output P1dB
dBm
+13.3
+13.5
+12.2
+11.7
Output IP3
dBm
+26.4
+25.9
+25.0
+24.3
Noise Figure
dB
3.2
3.4
Ordering Information
Part No.
Description
AG302-86*
InGaP HBT Gain Block
(lead-tin SOT-86 Pkg)
AG302-86G
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Pkg)
AG302-86PCB
700 – 2400 MHz Fully Assembled Eval. Board
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
RF Out
RF In
GND
1
2
3
4
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