参数资料
型号: AG603-89G
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: GREEN, TO-243C, SOT-89, SMT, 3 PIN
文件页数: 1/5页
文件大小: 211K
代理商: AG603-89G
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5
June 2008
AG603-89
InGaP HBT Gain Block
Product Features
DC – 3000 MHz
+19.5 dBm P1dB at 900 MHz
+33 dBm OIP3 at 900 MHz
18.5 dB Gain at 900 MHz
Single Voltage Supply
Lead-free / RoHS-compliant /
Green SOT-89 package
Internally matched to 50 Ω
Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Product Description
The AG603-89 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG603-89 typically provides
18.5 dB of gain, +33 dBm OIP3, and +19.5 dBm P1dB.
The
device
combines
dependable
performance
with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85
°C and is
housed
in
a
lead-free/green/RoHS-compliant
SOT-89
industry-standard SMT package.
The AG603-89 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG603-89 will work for other various applications
within the DC to 3 GHz frequency range such as CATV
and WiMAX.
Functional Diagram
RF IN
GND
RF OUT
GND
1
23
4
Function
Pin No.
Input
1
Output/Bias
3
Ground
2, 4
Specifications
(1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
DC
3000
Test Frequency
MHz
900
Gain
dB
18.5
Input Return Loss
dB
18
Output Return Loss
dB
14
Output P1dB
dBm
+19.3
Output IP3
(2)
dBm
+33.2
Output IP2
dBm
+45
Noise Figure
dB
3.9
Test Frequency
MHz
1900
Gain
dB
15.5
16.5
17.5
Output P1dB
dBm
+18.7
Output IP3
(2)
dBm
+33
Device Voltage
V
5.16
Device Current
mA
75
1. Test conditions: 25 C, Supply Voltage = +6 V, Rbias = 11.2 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +150
°C
DC Voltage
+7 V
RF Input Power (continuous)
+10 dBm
Junction Temperature
+177
°C
Thermal Resistance, Rth
154
°C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameter
Units
Typical
Frequency
MHz
500
900
1900
2140
S21
dB
19.1
18.5
16.5
16.0
S11
dB
-16
-18
-24
-21
S22
dB
-18
-14
-11
Output P1dB
dBm
+19.3
+18.7
+18.6
Output IP3
(2)
dBm
+33.6
+33.2
+33.0
Noise Figure
dB
3.8
3.9
4.1
Ordering Information
Part No.
Description
AG603-89G
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
AG603-89PCB
700 – 2400 MHz Fully Assembled Eval. Board
Standard T/R size = 3000 pieces on a 13” reel.
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