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参数资料
型号： AG604-89G
厂商： TRIQUINT SEMICONDUCTOR INC
元件分类： 放大器
英文描述： 0 MHz - 2700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装： GREEN, SMT, TO-243C, SOT-89, 3 PIN
文件页数： 4/5页
文件大小： 214K
代理商： AG604-89G
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 June 2008
AG604-89
InGaP HBT Gain Block
Application Circuit
Recommended Component Values
Reference
Frequency (MHz)
Designator
50
500
900
1900
2200
2500
3500
L1
820 nH
220 nH
68 nH
27 nH
22 nH
18 nH
15 nH
C1, C2, C4
.018 F
1000 pF
100 pF
68 pF
56 pF
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
Value / Type
Size
L1
39 nH wirewound inductor
0603
C1, C2
56 pF chip capacitor
0603
C3
0.018
μF chip capacitor
0603
C4
Do Not Place
R1
10.0
Ω 1% tolerance
0805
Recommended Bias Resistor Values
Supply
Voltage
R1 value
S ize
6 V
11.2 ohms
0805
7 V
24.5 ohms
1210
8 V
38 ohms
1210
9 V
51 ohms
2010
10 V
65 ohms
2010
12 V
91 ohms
2512
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (Vdevice = +5.16 V, ICC = 75 mA, T = 25 °C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-21.02
176.97
22.84
176.30
-25.02
0.11
-35.04
-72.79
250
-20.93
167.34
22.70
163.03
-25.01
0.10
-22.53
-107.76
500
-21.67
156.28
22.19
146.43
-24.96
-0.54
-16.95
-122.03
750
-21.48
144.30
21.63
131.68
-24.81
-1.02
-13.83
-138.27
1000
-21.14
138.44
20.90
117.72
-24.60
-1.19
-11.97
-151.92
1250
-21.11
130.15
20.08
105.21
-24.37
-2.45
-10.82
-165.62
1500
-21.02
123.48
19.35
93.63
-24.14
-3.48
-9.83
-176.24
1750
-20.63
121.82
18.55
82.34
-23.92
-4.63
-9.23
172.06
2000
-20.16
115.19
17.86
72.75
-23.50
-6.73
-8.61
162.19
2250
-18.96
110.58
17.11
63.40
-23.14
-8.83
-8.06
152.28
2500
-18.42
109.32
16.47
54.31
-22.93
-11.10
-7.62
143.58
2750
-17.62
106.38
15.75
45.65
-22.58
-14.33
-7.15
134.36
3000
-16.99
102.88
15.12
36.89
-22.23
-17.30
-6.90
126.68
3250
-16.24
100.26
14.54
28.84
-21.85
-20.87
-6.63
118.09
3500
-15.25
92.23
13.92
20.86
-21.64
-25.34
-6.29
110.51
3750
-14.75
89.12
13.42
12.78
-21.40
-28.81
-5.99
103.27
4000
-14.09
84.37
12.93
4.39
-21.06
-32.91
-5.69
96.26
4250
-13.32
81.46
12.35
-2.84
-20.80
-37.16
-5.52
89.72
4500
-12.78
76.94
11.87
-11.16
-20.62
-41.54
-5.17
82.40
4750
-12.01
71.30
11.34
-18.78
-20.41
-46.34
-4.97
75.56
5000
-11.42
66.87
10.79
-26.03
-20.12
-50.54
-4.67
69.05
5250
-10.91
60.24
10.24
-33.13
-20.03
-56.69
-4.58
62.28
5500
-10.07
55.04
9.71
-40.94
-19.99
-61.21
-4.24
55.62
5750
-9.48
51.03
9.26
-46.90
-19.72
-65.66
-4.01
51.15
6000
-9.24
46.08
8.80
-55.27
-19.45
-71.22
-3.93
44.84
Device S-parameters are available for download off of the website at: http://www.wj.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 F
R1
Bias
Resistor
RF IN
C4
Bypass
Capacitor
C2
Blocking
Capacitor
Vcc
Icc = 75 mA
AG604-89
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