参数资料
型号: AG910-07E
厂商: NVE Corp/Sensor Products
文件页数: 94/145页
文件大小: 0K
描述: KIT EVALUATION GMR SWITCH
标准包装: 1
传感器类型: 磁性 GMR(大型磁阻传感)
接口: 模拟
嵌入式:
已供物品: 3 个板,CD,磁体,样品,8-MSOP 插口
已用 IC / 零件: AD 系列开关
相关产品: AD004-00E-ND - SENSOR MAG SW 20G STNDRD 8-MSOP
AD122-00-ND - SENSOR MAG SW 40G CROS AX 8-MSOP
AD105-00-ND - SENSOR MAG SW 40G STANDRD 8-MSOP
391-1018-ND - SENSOR MAG SW 10G CRS AXS 8-MSOP
391-1012-ND - SENS MAG SW 28G CROS AXIS 8-MSOP
391-1010-ND - SENS MAG SW 40G CROS AXIS 8-MSOP
391-1009-ND - SENS MAG SW 20G CROS AXIS 8-MSOP
391-1008-ND - SENSOR MAG SW 28G STNDRD 8-MSOP
391-1006-ND - SENSOR MAG SW 40G STNDRD 8-MSOP
391-1005-ND - SENSOR MAG SW 20G STNDRD 8-MSOP
其它名称: 391-1061
Application Notes
GMR Magnetic Field Sensors (Magnetometers)
The NVE standard line of magnetic field sensors use a unique configuration employing a Wheatstone
bridge of resistors and various forms of flux shields and concentrators. Using magnetic materials for
shielding eliminates the need for a bias field with GMR sensors. NVE has developed a process to
plates a thick layer of magnetic material on the sensor substrate. This layer forms a shield over the
GMR resistors underneath, essentially conducting any applied magnetic field away from the shielded
resistors. The configuration allows two resistors (opposite legs of the bridge) to be exposed to the
magnetic field. The other two resistors are located under the plated magnetic material, effectively
shielding them from the external applied magnetic field. When the external field is applied, the
exposed resistors decrease in electrical resistance while the other resistor pair remain unchanged,
causing a signal output at the bridge terminals.
The plating process developed by NVE for use in GMR sensor applications has another benefit: it
allows flux concentrators to be deposited on the substrate. These flux concentrators increase the
sensitivity of the raw GMR material by a factor of 2 to 100. The flux concentration factor is roughly
equivalent to the length of one shield divided by the length of the gap. This allows use of GMR
materials that saturate at higher fields. For example, to sense a field from 0 to 100 Oersteds, NVE
deposits a GMR sensor that saturates at a nominal 300 Oersteds and flux concentrators with a
magnification factor of three. The figure below shows the basic layout of the device:
Axis of sensitivity
Silicon substrate
(1300 μ m x 400 μ m)
Gap
Flux concentrator (2)
Metal interconnects
Magnetically shielded resistor (2)
Bonding pads (4)
(100 μ m x 100 μ m)
Magnetically active resistor pair
T YPICAL GMR M AGNETIC F IELD S ENSOR L AYOUT
- 94 -
www.nve.com phone: 952-829-9217 fax: 952-829-9189
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