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| 型号： | AG911-07E |
| 厂商： | NVE Corp/Sensor Products |
| 文件页数： | 85/145页 |
| 文件大小： | 0K |
| 描述： | KIT EVALUATION GMR SWITCH |
| 标准包装： | 1 |
| 传感器类型： | 磁性 GMR（大型磁阻传感） |
| 接口： | 模拟 |
| 嵌入式： | 否 |
| 已供物品： | 3 个板，CD，磁体，样品 |
| 已用 IC / 零件： | AD 系列开关 |
| 相关产品： | AD004-00E-ND - SENSOR MAG SW 20G STNDRD 8-MSOP AD122-00-ND - SENSOR MAG SW 40G CROS AX 8-MSOP AD105-00-ND - SENSOR MAG SW 40G STANDRD 8-MSOP 391-1018-ND - SENSOR MAG SW 10G CRS AXS 8-MSOP 391-1012-ND - SENS MAG SW 28G CROS AXIS 8-MSOP 391-1010-ND - SENS MAG SW 40G CROS AXIS 8-MSOP 391-1009-ND - SENS MAG SW 20G CROS AXIS 8-MSOP 391-1008-ND - SENSOR MAG SW 28G STNDRD 8-MSOP 391-1006-ND - SENSOR MAG SW 40G STNDRD 8-MSOP 391-1005-ND - SENSOR MAG SW 20G STNDRD 8-MSOP |
| 其它名称： | 391-1062 |
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Application Notes
Temperature Characteristics of GMR Sensors
Temperature excursions cause several changes to the characteristics of GMR sensors. The changes are
described below:
1.
2.
3.
Changes to base resistance of the sensor element [TCR] – This is a temperature coefficient of
resistance of the sensor element with no applied magnetic field to the sensor. The TCR is
normally given in %/oC.
Changes to the % GMR of the sensor element [TCGMR] – When a magnetic field is applied,
the % GMR exhibited by the sensor element will change. Generally as temperature increases,
% GMR decreases. TCGMR is normally given in %/oC.
Changes to the saturation field of the sensor element [TCHsat] – The magnetic field at which
the sensor will provide its maximum output will also change with temperature. The saturation
field (Hsat) will decrease as temperature increases. TCHsat is normally given in %/oC.
For purposes of temperature compensation, a single resistor sensor element made from GMR material
can be modeled as two resistors in series. The first resistor is the base resistive element, and is a
constant resistance at a given temperature, regardless of the applied magnetic field. The second resistor
represents the changing resistance of the single resistor sensor element made from GMR material, as
magnetic field is applied. This model is shown in the following diagram:
R1
Base
Resistance
R2
GMR
Resistance
The base resistance of R1 is the resistance of the sensor element at 25°C when the saturating magnetic
field is applied and R2 has dropped to 0 resistance; in other words, the minimum resistance of the
sensor element as described in the GMR Material Physics section. The following formula can be used
to compute R1 at various temperatures:
R1 = R1 Base Resistance * [ 1 + (TCR * (Temperature - 25°C))]
The resistance of R2 in the diagram varies both with the temperature and the applied magnetic field.
The base resistance of R2 is defined as its maximum resistance at 25°C. This is the resistance with zero
applied magnetic field. The base resistance of R2 will vary with temperature (at zero applied field) as
described by the following formula:
R2 Zero Field = R2 Base Resistance * [ 1 + (TCGMR * (Temperature - 25°C))]
- 85 -
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