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参数资料
| 型号： | AGR09030EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 3/8页 |
| 文件大小： | 226K |
| 代理商： | AGR09030EF |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR09030E
November 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09030E
A. Schematic
Parts List:
■
Microstrip line: Z1 0.900 in. x 0.066 in.; Z2 0.294 in. x 0.050 in.; Z3 0.123 in. x 0.066 in.; Z4 0.703 in. x 0.066 in.; Z5 0.267 in. x 0.150 in.;
Z6 0.270 in. x 0.150 in.; Z7 0.050 in. x 0.440 in.; Z8 0.324 in. x 0.440 in.; Z9 0.100 in. x 0.440 in.; Z10 0.155 in. x 0.440 in.;
Z11 1.024 in. x 0.050 in.; Z12 0.123 in. x 0.300 in.; Z13 0.050 in. x 0.300 in.; Z14 0.213 in. x 0.300 in.; Z15 0.393 in. x 0.100 in.;
Z16 0.194 in. x 0.100 in.; Z17 0.523 in. x 0.066 in.; Z18 1.085 in. x 0.066 in.; Z19 2.048 x 0.050.
■
ATC chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C27: 8.2 pF, 100A8R2BW; C4, C5, C6, C7: 12 pF, 100B120JW;
C3: 1.0 pF, 100B1R0BW; C9, C16, C20: 10 pF, 100B100JW; C2, C17: 8.2 pF, 100B8R2BW.
■
Murata chip capacitor: C12, C23: 0.01 F GRM40X7R103K100AL.
■
0603 chip capacitor: C10, C21: 220 pF.
■
Sprague tantalum chip capacitor: C14, C25, C26: 22 F, 35 V.
■
Kreger ferrite bead: FB1: 2743D19447.
■
Kemet chip capacitor: C13, C24: 0.10 F C1206C104KRAC7800.
■
Vitramon chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA.
■
1206 size 0.25 W, fixed film, chip resistors: R1: 51
, RM73B2B510J; R2: 47 k, RM73B2B473J; R3: 1 k, RM73B2B102J.
■
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout
Figure 2. AGR09030E Test Circuit
DUT
C14
R1
C13
C12
C3
FB1
Z12
Z3
C1
Z4
Z5
Z6
Z7
Z8
Z9
C22
C21
C20
C19
Z19
C25
C24
+
C23
RF INPUT
VGG
VDD
C11
C10
C9
C8
C2
C4
C6
Z10
C5
C7
Z14
RF OUTPUT
C17
Z15
C16
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z11
C26
R2
R3
+
Z13
+
Z1
Z2
C27
Z18
C18
Z17
Z16
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PDF描述 |
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| AGR09030EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09030EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09030EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09030GUM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09030EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045E | 制造商:PEAK 制造商全称:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045WEF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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