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参数资料
| 型号： | AGR09030XUM |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 67K |
| 代理商： | AGR09030XUM |
2
Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
May 2004
AGR09030XUM
Preliminary Product Brief
AGR09030XUM Package Dimensions
Controlling dimensions are in millimeters.
Note: Dimensions are shown in
.
Label Notes:
■
M before the part number denotes model program. X before the part number denotes engineering prototype.
■
The last three letters of the part number denote wafer technology, flange type, and packaging technology.
■
YYWWL is the date code including place of manufacture: year year work week (YYWW), L = location (P = Phillipines).
■
XXXXX = five-digit wafer lot number.
■
ZZZZZZZZ = Assembly lot number.
SIDE VIEW
TOP VIEW
BOTTOM VIEW
END VIEW
6.00 ± 0.20
(0.234 ± 0.0078)
2.95 REF
11.00 ± 2.0
(0.434 ± 0.078)
2.24
(0.088)
0.61 x 0.61 MAX x 45
2.50
(0.098)
2.90
(0.114)
2 PLACES
1.00
(0.039)
0.315
(0.013)
0.65
(0.03)
1.1
(0.043)
2 PLACES
11.00 / 11.30 MAX
(0.433 / 0.448 MAX)
16.00
(0.630)
1.27
(0.0495)
(0.025 x 0.025)
(0.115)
0.315
(0.013)
15.90 / 16.20 MAX
(0.626 / 0.6378 MAX)
3.35 REF
14 ± 1
0.90
(0.036)
0.254
(0.099)
(0.131)
2.95
(0.115)
3.15 ± 0.15
(0.123 ± 0.006)
1.60
(0.063)
0.015
(0.0006)
1. DRAIN
2. GATE
11.35
(0.448)
3. SOURCE
AGR09030XUM
AGERE
YYWWL XXXXX
ZZZZZZZZ
millimeters
inches
()
-------------------------
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09045E | 制造商:PEAK 制造商全称:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045WEF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09070EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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