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参数资料
| 型号： | AGR09060GUM |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 245K |
| 代理商： | AGR09060GUM |
2
Agere Systems Inc.
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
July 2004
AGR09060GUM
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =100 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
1.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0 V)
IDSS
——
4
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1.0 A)
GFS
—3
—
S
Gate Threshold Voltage (VDS =10V, ID = 450 A)
VGS(TH)
——
4.2
Vdc
Gate Quiescent Voltage (VDS =28V, IDQ = 550 mA)
VGS(Q)
—3.5
—
Vdc
Drain-source On-voltage (VGS =10V, ID = 1.0 A)
VDS(ON)
—0.25
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CISS
—112
—
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—
31.5
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—1.5
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 10 W, IDQ = 550 mA)
GL
17
18
—
dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 550 mA)
P1dB
60
72
—
W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 550 mA)
η
—60
—
%
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 60 WPEP, IDQ = 550 mA,
typical efficiency = 43%)
IMD
—
–32
—
dBc
Input Return Loss
RL
—
–14
—
dB
Ruggedness
(VDS = 28 V, POUT = 60 W, IDQ = 550 mA, f = 880 MHz,
VSWR = 10:1, all angles)
—
No degradation in output power.
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