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参数资料
| 型号： | AGR18030EF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 69K |
| 代理商： | AGR18030EF |
Agere Systems Inc.
3
Product Brief
AGR18030E
April 2004
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR18030EU
AGR18030EF
Label Notes:
s
M before the part number denotes model program. X before the part number denotes engineering prototype.
s
The last two letters of the part number denote wafer technology and package type.
s
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
s
ZZZZZZZ = seven-digit assembly lot number on production parts.
s
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
AGERE
2
ZZZZZZZ
YYWWLL
AGR21045U
1
3
2
3
1
AGERE
AGR18030XU
YYWWLL XXXXX
ZZZZZZZ
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
AGR21045F
YYWWLL
ZZZZZZZ
1
2
3
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
AGR18030XF
YYWWLL XXXXX
ZZZZZZZ
相关PDF资料 |
PDF描述 |
|---|---|
| AGR18030EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18045EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18045E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
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