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参数资料
| 型号： | AGR19030EU |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 1/11页 |
| 文件大小： | 207K |
| 代理商： | AGR19030EU |
Preliminary Data Sheet
April 2004
AGR19030E
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030E is a 30 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. Available Packages
N-CDMA Features
s
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 350 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 6 W.
— Power gain: 16 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49 dBc.
EDGE Features
s
Typical EDGE performance, 1960 MHz, 26 V,
IDQ = 250 mA:
— Output power (POUT): 12 W typical.
— Power gain: 15.5 dB.
— Efficiency: 38% typical.
— Modulation spectrum:
@ ±400 kHz = –61 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.2%
GSM Features
s
Typical performance over entire GSM band:
— P1dB: 30 W typical.
— Continuous wave (CW) power gain: @ P1dB =
15 dB.
— CW efficiency @ P1dB = 55% typical.
— Return loss: –12 dB.
Device Performance Features
s
High-reliability, gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 30 W CW
output power.
s
Large signal impedance parameters available.
ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19030EU (unflanged)
AGR19030EF (flanged)
AGR19030E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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