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参数资料
| 型号： | AGR19045EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 5/10页 |
| 文件大小： | 332K |
| 代理商： | AGR19045EF |
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Test Circuit Illustrations for AGR19045EF
A. Schematic
B. Component Layout
Parts List:
Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.250 in. x 0.160 in.; Z5, 0.180 in. x 0.260 in.;
Z6, 0.400 in. x 0.735 in.; Z7, 0.355 in. x 0.840 in.; Z8, 0.120 in. x 0.280 in.; Z9, 0.525 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.;
Z11, 0.245 in. x 0.067 in.; Z12, 0.290 in. x 0.067 in.; Z13, 0.370 in. x 0.030 in.; Z14, 0.280 in. x 0.050 in.
ATC B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF.
ATC S case chip capacitor: C21: 0.2 pF
Kemet B case chip capacitors: C2, C16: 0.1 F CDR33BX104AKWS. Tantalum capacitor: C17, 1 F, 50 V, T491C.
Vitramon 1206: C4, C14: 22000 F.
Johanson Giga-Trim variable capacitor C7: 0.4 pF—2.5 pF.
Murata 0805: C3, C15: 0.01 F, GRM40X7R103K100AL.
Sprague tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 F, 35 V.
Fair-Rite ferrite bead: FB1: 2743019447.
Fixed film chip resistor: R1: 12 , 0.25 W, 0.08 x 0.13.
PCB etched circuit boards.
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19045EF Test Circuit
DUT
R1
C3
Z13
C6 Z3
Z1
C20
Z7
Z8
Z10
Z11
RF INPUT
VGG
VDD
RF
Z6
Z4
FB1
Z14
C4
C15
3
1
2
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
C23
C12
C14
C13
C1
C2
C5
C22
Z2
C7
Z5
Z9
Z12
OUTPUT
C19
C16
C18
C17
C21
2
3
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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