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参数资料
| 型号： | AGR19180EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-4 |
| 文件页数： | 1/10页 |
| 文件大小： | 228K |
| 代理商： | AGR19180EF |
Preliminary Data Sheet
April 2004
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), code division multiple access (CDMA),
global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier
applications.
Figure 1. AGR19180EF (flanged) Package
CDMA Features
s
Typical two carrier CDMA performance:
VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97
CDMA pilot, sync, paging, traffic codes 8—13
(9 channels) 1.2288 MHz channel bandwidth (BW),
adjacent channel power ration (ACPR) measured
over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.
Distortion products measured over 1.2288 MHz
channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz.
Peak/avg = 9.72 dB @ 0.01% probability on
CCDF:
— Output power: 38 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –48.5 dBc
— Return loss: –12 dB.
Device Performance Features
s
High-reliability, gold-metalization process.
s
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
power pulsed 4 s at 10% duty.
s
Large signal impedance parameters available.
ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
375D–03, STYLE 1
AGR19180EF
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1000
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19K180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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