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参数资料
| 型号： | AGR21030EF |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 8/10页 |
| 文件大小： | 290K |
| 代理商： | AGR21030EF |
Agere Systems Inc.
7
Preliminary Data Sheet
AGR21030EF
June 2004
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, IDQ = 300 mA, POUT = 7 W.
2-carrier W-CDMA 3GPP, Peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 CBW.
Figure 8. Broadband Performance
TEST CONDITIONS:
VDD = 28 V, IDQ = 300 mA, POUT = 7 W.
2-carrier W-CDMA 3GPP, Peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 CBW.
Figure 9. Spectral Plot
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2100
2110
2120
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FREQUENCY (MHz)
G
A
IN
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d
B)
Z
-50.0
-40.0
-30.0
-20.0
-10.0
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(%
),
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),
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M
D3
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),
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P
R
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)Z
GAIN
RL
IMD3
ACPR
F1
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IMD3
ACPR
Center 2.140 GHz
Span 50 MHz
-45
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-5
-0
+5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR21045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
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