参数资料
型号: AGR21030EU
元件分类: 功率晶体管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: SURFACE MOUNT PACKAGE-2
文件页数: 5/10页
文件大小: 300K
代理商: AGR21030EU
4
Agere Systems Inc.
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
May 2004
AGR21030E
Preliminary Data Sheet
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f)
ZS
(Complex Source Impedance)
ZL
(Complex Optimum Load Impedance)
2110 (f1)
4.64 – j16.5
10.49 – j6.22
2140 (f2)
4.43 – j15.7
10.36 – j6.05
2170 (f3)
4.26 – j15.0
10.33 – j5.93
0.1
0.2
0.3
0.4
0.5
0.6
0
.7
0.7
0
.8
0.8
0
.9
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180±
90
-90
-8
5
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.0
4
0.05
0.0
6
0.07
0.0
8
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.1
7
0.18
0.1
9
0.2
1
0
.22
0.23
0.24
0.25
0.26
0.27
0.2
8
0.2
9
0.3
1
0.3
2
0.3
3
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.4
2
0.4
3
0.4
4
0.45
0.4
6
0.47
0.48
0.49
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
IS
S
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
A
N
G
L
E
O
F
R
E
F
L
E
C
T
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
<
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
<
IN
D
U
C
T
CA
PA
CIT
IV
ER
EA
CT
AN
CE
CO
M
PO
N
EN
T
(-j
X/
Zo
),
O
R
IN
D
U
C
T
IV
E
SU
SC
E
P
T
A
N
C
E
(-
jB
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
ZL
f3
f1
ZS
f2
f1
Z0 = 20
DUT
ZS
ZL
INPUT MATCH
OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
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