参数资料
型号: AGR26125EU
厂商: LSI CORP
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件页数: 6/9页
文件大小: 252K
代理商: AGR26125EU
6
Agere Systems Inc.
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
August 2004
AGR26125E
Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 V, IDQ = 1200 mA, POUT = 110 W (PEP), F = 2595 MHz.
Figure 6. Two-tone IMD vs. Tone Spacing
Test Conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, F1 = 2590 MHz, F2 = 2600 MHz; VDD = 28 V, IDQ = 1200 mA.
Figure 7. Two-carrier W-CDMA Performance
-60
-50
-40
-30
-20
-10
0
0.1
1
10
100
TONE SPACING (MHz)Z
IMD
(dBc)
Z
IM3
IM5
IM7
-60
-50
-40
-30
-20
-10
0
10
15
20
25
30
35
40
POUT (W)Z
IMD,
ACP
(dBc)
Z
0
5
10
15
20
25
30
PAE
(%),
GAIN
(dB)
Z
PAE
IMD
ACP
GAIN
相关PDF资料
PDF描述
AGR26125EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26125EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26125EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGRA10GM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGRA10GM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
AGR26180EF 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
AGR34006827 制造商:LG Corporation 功能描述:Pipe Assembly,Telescopic
AGR34120801 制造商:LG Corporation 功能描述:Pipe Assembly,Metal
AGR34120805 制造商:LG Corporation 功能描述:Pipe Assembly,Metal
AGR34410710 制造商:LG Corporation 功能描述:Pipe Assembly,Telescopic