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参数资料
| 型号： | AGRB10XM |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 102K |
| 代理商： | AGRB10XM |
Preliminary Data Sheet
July 2004
AGRB10XM
10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGRB10 is a broadband, general-purpose, high-
voltage, gold-metalized, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for 1.0 GHz to 2.7 GHz operation.
Figure 1. AGRB10 Gull-Wing Package
Device Features
■
High-reliability, gold-metalization process.
■
Low hot carrier injection (HCI) induced bias drift
over 20 years.
■
High gain, efficiency, and linearity.
■
Integrated ESD protection.
■
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) with 10 W CW output power.
■
Large signal impedance parameters available.
Performance Features
1805 MHz to 1880 MHz
■
Continuous wave (CW) performance at @ 28 V:
— Output power: 11 W typical @ P1dB.
— Power gain: 15 dB.
— Efficiency: 58% @ P1dB.
— IM3:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Return loss: –12 dB.
1930 MHz to 1990 MHz
■
CW performance at @ 28 V:
— Output power: 11 W typical @ P1dB.
— Power gain: 16 dB.
— Efficiency: 58% @ P1dB.
— IM3: –32 dBc, 10 W PEP.
— Return loss: –10 dB.
2110 MHz to 2170 MHz
■
CW performance at @ 28 V:
— Output power: 11 W typical @ P1dB.
— Power gain: 14 dB.
— Efficiency: 53% @ P1dB.
— IM3: –28 dBc, 10 W PEP.
— Return loss: –10 dB.
Table 1. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGRB10
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGRF1000 | 功能描述:可复位保险丝 AGRF1000 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGRF1000-2 | 功能描述:可复位保险丝 AGRF1000-2 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGRF1000-AP | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:PolySwitch Resettable Devices Automotive Devices |
| AGRF1100 | 功能描述:可复位保险丝 AGRF1100 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGRF1100-2 | 功能描述:可复位保险丝 AGRF1100-2 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
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