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参数资料
| 型号： | AH1-G |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 250 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | GREEN, TO-243C, SOT-89, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 241K |
| 代理商： | AH1-G |
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 January 2008
AH1
High Dynamic Range Amplifier
Product Features
250 – 4000 MHz
+41 dBm OIP3
3 dB Noise Figure
13.5 dB Gain
+22 dBm P1dB
Lead-free/Green/RoHS-compliant
SOT-89 Package
Single +5 V Supply
MTTF > 100 years
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / Wi-Bro / WiMAX
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
The AH1 is a high dynamic range amplifier in a low-cost
surface-mount package.
The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The device
combines dependable performance with superb quality to
maintain MTTF values exceeding 100 years at mounting
temperatures of +85 °C.
The AH1 is available in the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
The broadband amplifier uses a high reliability GaAs
MMIC technology and is targeted for applications where
high linearity is required.
It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA.
In addition, the
AH1 will work for other applications within the 250 to
4000 MHz frequency range such as fixed wireless, W-
LAN, and WiBro.
Functional Diagram
RF IN
GND
RF OUT
GND
1
2
3
4
Function
Pin No.
Input
1
Output/Bias
3
Ground
2, 4
Specifications
(1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
250
4000
Test Frequency
MHz
800
Gain
dB
12.4
13.5
Input Return Loss
dB
8
Output Return Loss
dB
15
Output P1dB
dBm
+21.7
Output IP3
(2)
dBm
+37
+41
Noise Figure
(3)
dB
3.0
Operating Current Range
mA
120
150
180
Supply Voltage
V
5
1. Test conditions unless otherwise noted: T = 25 C, 50 system.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +150 °C
Supply Voltage
+6 V
RF Input Power (continuous)
+10 dBm
Junction Temperature
+160 °C
Thermal Resistance, Rth
59 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameter
Units
Typical
Frequency
MHz
900
1900
2140
S21
dB
14.2
12.2
12.0
S11
dB
-21
-14
-21
S22
dB
-14
-13
-11
Output P1dB
dBm
+21.7
+22
Output IP3
(2)
dBm
+42
+41
+40
IS-95 Channel Power
(5)
dB
+15.5
+16.5
Noise Figure
dB
3.2
3.3
Supply Voltage
V
5
Device Current
mA
150
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3.
5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Ordering Information
Part No.
Description
AH1-G
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH1-PCB
0.8 – 2.5 GHz Fully Assembled Application Circuit
Standard T/R size = 1000 pieces on a 7” reel.
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