参数资料
型号: AH103
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 60 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: PLASTIC, MS-012, SOIC-8
文件页数: 1/6页
文件大小: 292K
代理商: AH103
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
March 2005
The Communications Edge
TM
AH103
High Gain, High Linearity Watt Amplifier
Product Information
Product Features
60 – 2700 MHz
+27 dBm P1dB
+46 dBm Output IP3
28.5 dB Gain @ 900 MHz
Excellent ACPR
MTTF > 100 Years
SOIC-8 Pkg w/ heat slug
Applications
Mobile Infrastructure
W-LAN / ISM / RFID
MDS / MMDS Infrastructure
Product Description
The AH103 is a high gain, high linearity -Watt
amplifier. This device is comprised of two individual
MMIC amplifiers internally and can be used with an
external interstage match for any of the mobile
infrastructure frequency bands.
The dual-stage
amplifier achieves up to +46 dBm IP3 performance
with 28.5 dB gain.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The AH103 has an associated MTTF of
a minimum of 100 years at a mounting temperature
of 85
°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high linearity are required.
Functional Diagram
1
2
3
4
8
7
6
5
AMP 1
AMP 2
Function
Pin No.
Amp2 in
1
Amp1 out / Bias 1
2
Ground
3, 5, 8,
Backside copper
RF in (Amp1 in)
4
RF out (Amp2 out)
6
Bias 2
7
Specifications
Parameter
Units
Min
Typ
Max
Frequency Range (2)
MHz
60
800
2700
Gain
dB
26.5
28.5
Input Return Loss
dB
20
Output Return Loss
dB
11
Output P1dB
dBm
+26
+27
Output IP3 (3)
dBm
+43
+46
IS-95 Channel Power (4)
@ -45 dBc ACPR
dBm
+21
Noise Figure
dB
2.9
Supply Voltage (Amp1)
V
+4.5
Supply Voltage (Amp2)
V
+9
Operating Current (Amp1)
mA
55
75
100
Operating Current (Amp2)
mA
170
200
230
Thermal Resistance (5)
°C / W
20.6
Junction Temperature (6)
°C
160
Test conditions unless otherwise noted.
1. T = 25C, Vdd1 = +4.5 V, Vdd2 = +9 V, Frequency = 800 MHz in a tuned application circuit.
2. The frequency of operation & bandwidth is determined by the external interstage match.
3. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability
±750 kHz offset, 30 kHz BW, Channel BW = 1.23 MHz, frequency = 880 MHz.
5. The worst-case junction temperature for a given ground tab temperature can be calculated by
multiplying the thermal resistance with the total package power dissipation and adding it to the tab
temperature. ie. At 85
°C case temperature for a typical device, the worst-case junction temperature
would be = 85
°C + (9 V * 0.2 A + 4.5 V * 0.075 A) = 129°C.
6. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Typical Performance
Parameter
Units
Typical
Frequency
MHz
900
1900
2140
2400
S21
dB
28.5
26
25
24.7
S11
dB
-15
-12
-11
-12
S22
dB
-11
-14
-17
Output P1dB
dBm
+27
+26.5
+26
Output IP3
dBm
+46
+45
+43.3
Channel Power
@ -45 dBc ACPR / ACLR
dBm
+21
+20
+17.2
Noise Figure
dB
2.9
3.7
3.5
3.6
Supply Bias 1
+4.5 V @ 75 mA
Supply Bias 2
+9 V @ 200 mA
7. Typical parameters reflect performance in an application circuit.
8. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
Absolute Maximum Rating
Ordering Information
Parameter
Rating
Part No.
Description
Operating Case Temperature
-40 to +85
°C
AH103
High Gain Watt Amplifier
Storage Temperature
-55 to +125
°C
(available in tape and reel)
DC Voltage (pin 2)
+6 V
DC Voltage (pin 6, 7)
+11 V
RF Input Power (continuous)
4 dB above Input P1dB
Junction Temperature
+220
°C
Operation of this device above any of these parameters may cause permanent damage.
相关PDF资料
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AH103 60 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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