收藏本站
参数资料
型号： AH110-89
厂商： TRIQUINT SEMICONDUCTOR INC
元件分类： 放大器
英文描述： 50 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： SMT, TO-243C, SOT-89, 3 PIN
文件页数： 4/7页
文件大小： 542K
代理商： AH110-89
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 4 of 7
December 2005
AH110 / ECG014
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
1960 MHz Application Circuit (AH110-89PCB1960)
Typical RF Performance at 25
°C
ID=C1
C=56 pF
ID=C4
C=56 pF
ID=C12
C=0.7 pF
ID=C5
C=56 pF
ID=C9
C=1.5 pF
ID=L3
L=2.2 nH
ID=L1
L=15 nH
ID=L2
L=15 nH
ID=R3
R=220 Ohm
ID=R2
R=390 Ohm
ID=D1
ID=R1
R=30 Ohm
ID=R4
R=22 Ohm
ID=C6
C=56 pF
ID=C2
C=1000 pF
ID=C3
C=1e5 pF
NET="AH110"
DIODE
+8.0V
Diode D1 is used as over-voltage protection on the evalution boards.
It is not specifically required in the circuit layout in a system using a DC regulator.
C12 is placed at silkscreen marker ‘I” or center of component placed at 43 deg. @ 1.9 GHz away from pin 1.
C9 placed at silkscreen marker ‘8” or center of component placed at 39 deg. @ 1.9 GHz away from pin 3.
S21 vs. Frequency
0
5
10
15
20
25
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
S
21
(dB
)
+25°C
+85°C
-40°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
S
11
(dB
)
+25°C
+85°C
-40°C
S22 vs. Frequency
-12
-10
-8
-6
-4
-2
0
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
S2
2
(dB
)
+25°C
+85°C
-40°C
Noise Figure vs. Frequency
0
1
2
3
4
5
6
7
1850
1870 1890
1910 1930
1950 1970
1990
Frequency (MHz)
NF
(dB
)
+25°C
+85°C
-40°C
P1 dB vs. Frequency
15
17
19
21
23
25
1850 1870 1890 1910 1930 1950 1970 1990
Frequency (MHz)
P1
d
B
(dB
m
)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas. BW, 1900 MHz
-70
-65
-60
-55
-50
-45
-40
-35
10
11
12
13
14
15
16
17
18
Output Power (dBm)
AC
P
R
(dB
c
)
OIP3 vs. Frequency
+25°C, +9 dBm / tone
32
34
36
38
40
42
1850 1870
1890 1910
1930 1950
1970 1990
Frequency (MHz)
OI
P
3
(
d
B
m
)
OIP3 vs. Temperature
freq. = 1900, 1901 MHz, +9 dBm / tone
32
34
36
38
40
42
-40
-15
10
35
60
85
Temperature (°C)
OI
P
3
(
d
B
m
)
OIP3 vs. Output Power
Freq. = 1900, 1901 MHz, 25°C
32
34
36
38
40
42
6
7
8
9
10
11
12
13
14
Output Power (dBm)
OI
P
3
(
d
B
m
)
Frequency
1960 MHz
S21 – Gain
17.6 dB
S11 – Input Return Loss
-17 dB
S22 – Output Return Loss
-7.4 dB
Output P1dB
+23 dBm
Output IP3
(+9 dBm / tone, 1 MHz spacing)
+38 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+16 dBm
Noise Figure
5.2 dB
Device Voltage
+5 V
Quiescent Current
100 mA
相关PDF资料
PDF描述
AH110-89 50 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH115-S8G 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115-S8 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115-S8 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
相关代理商/技术参数
参数描述
AH110-89G 功能描述:射频放大器 50-2000MHz 20.5dB Gain@900MHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
AH110-89PCB1900 功能描述:射频开发工具 1900MHz Eval Brd 17.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
AH110-89PCB900 功能描述:射频开发工具 900MHz Eval Brd 20.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
AH110-RFID 制造商:WJCI 制造商全称:WJCI 功能描述:0.2 Watt, High Linearity InGaP HBT Amplifier
AH11-1 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*