Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 6
October 2005
AH116 / ECP052G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
800 – 1000 MHz
+28 dBm P1dB
+43 dBm Output IP3
17.5 dB Gain @ 900 MHz
+5V Single Positive Supply
MTTF > 100 Years
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH116 / ECP052G is a high dynamic range driver
amplifier in a low-cost surface mount package.
The
InGaP/GaAs HBT is able to achieve high performance
for various narrow-band tuned application circuits with
up to +43 dBm OIP3 and +28 dBm of compressed 1-dB
power and is housed in a lead-free/green/RoHS-compliant
SOIC-8 package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH116 / ECP052G to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications
(1)
Parameters
Units
Min
Typ
Max
Frequency Range
MHz
900
Gain
dB
15
17.5
Input R.L.
dB
18
Output R.L.
dB
7
Output P1dB
dBm
+27
+28.7
Output IP3
(2)
dBm
+42
+43
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+23
Noise Figure
dB
7
Operating Current Range
(3)
mA
200
250
300
Device Voltage
V
+5
1. Test conditions unless otherwise noted: 25 C, +5V Vsupply, 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-65 to +150
°C
RF Input Power (continuous)
+22 dBm
Device Voltage
+8 V
Device Current
400 mA
Device Power
2 W
Junction Temperature
+250
°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
17.5
S11
dB
-18
S22
dB
-7
Output P1dB
dBm
+28.7
Output IP3
(2)
dBm
+43
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+23
Noise Figure
dB
7
Supply Bias
+5 V @ 250 mA
Ordering Information
Part No.
Description
AH116-S8*
Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
ECP052G*
Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
AH116-S8G
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH116-S8PCB900
900 MHz Evaluation Board
*
This package is being phased out in favor of the green package type which is backward compatible for
existing designs.
1
2
3
4
8
7
6
5