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参数资料
| 型号： | AH210 |
| 元件分类： | 放大器 |
| 英文描述： | 1500 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | SMT, MS-012, SOIC-8 |
| 文件页数： | 1/2页 |
| 文件大小： | 91K |
| 代理商： | AH210 |
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
April 2003
The Communications Edge
TM
AH210
1 Watt, High Gain HBT Amplifier
Preliminary Product Information
Product Features
1500 – 2300 MHz
25 dB Gain @ 1960 MHz
+30 dBm P1dB
+49 dBm Output IP3
Single Positive Supply (+5 V)
SOIC-8 SMT Package
Product Description
The AH210 is a high gain, high dynamic range driver
amplifier in a low-cost surface mount package.
The
InGaP/GaAs
HBT
is
able
to
achieve
superior
performance over a broad frequency range with a gain of
25dB, +49 dBm OIP3 and +30 dBm of compressed 1-dB
power. The part is housed in an industry standard SOIC-8
SMT package. All devices are 100% RF and dc tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high gain, high linearity and high power are
required. The internal active bias allows the AH210 to
maintain high performance over temperature and the
active bias circuitry allows it to operate directly off a +5
V supply.
Functional Diagram
Function
Pin No.
Vc1
1
Vbias
2
Input
3
Bias Control
4
Output / Vc2
5,6,7,8
GND
Slug
Target Specifications
Parameters
Units
Min
Typ
Max
Frequency Range
MHz
1500
1960
2300
S21 - Gain
dB
25
S11 - Input R.L.
dB
-15
S22 - Output R.L.
dB
-15
Output P1dB
dBm
+30
Output IP3
2
dBm
+47
Noise Figure
dB
5.0
IS-95 Channel Power
@ -55 dBc ACPR, 9 Ch .Fwd., 1960 MHz
dBm
+21.5
IS-95 Channel Power
@ -65 dBc ACPR, 9 Ch .Fwd., 1960 MHz
dBm
+19
W-CDMA Channel Power
@ -50 dBc, 2140MHz, 64 DPCH
dBm
+20
W-CDMA Channel Power
@ -55 dBc, 2140MHz, 64 DPCH
dBm
+19
Operating Current Range
mA
440
Device Voltage
V
5
Test conditions unless otherwise noted.
1. T = 25C, Vsupply = +5 V, Frequency = 1960 MHz, in recommended application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Specifications
Parameters
Units
Typical
Frequency
MHz
1850
1960
2140
S21 - Gain
dB
26
25
24
S11 - Input R.L.
dB
-14
-15
-16
S22 - Output
R.L.
dB
-14
-15
-17
Output P1dB
dBm
30
+30
+29.5
Output IP3
2
dBm
47
+47
+49
Noise Figure
dB
5.0
Supply Bias
+5 V @ 440 mA
Typical parameters reflect performance in an application circuit:
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
RF Input Power (continuous)
+10 dBm
AH210
1 Watt, High Linearity HBT Amplifier
dc Voltage
+6 V
(Available in Tape & Reel)
Operation of this device above any of these parameters may cause permanent damage.
Thermal Information
Parameters
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Thermal Resistance
33
°C/W
. To ensure MTTF > 1x10e6 hrs
4
2
3
1
5
Bias
Active
7
6
8
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