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参数资料
| 型号： | AH212-S8G |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 1800 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, MS-012, SMT, SOIC-8 |
| 文件页数： | 6/12页 |
| 文件大小： | 454K |
| 代理商： | AH212-S8G |
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc
Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 3 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 1850 MHz Reference Design
Typical RF Performance at 25
°C
Frequency (MHz)
1800
1850
1900
Gain (dB)
25.4
25.1
25
Input Return Loss (dB)
10.5
12
12.5
Output Return Loss (dB)
15.5
15
13
Output P1dB (dBm)
+30.5
+30
Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
+47
+47.5
Noise Figure (dB)
5.8
5.9
Device / Supply Voltage
+5 V
Quiescent Current
400 mA
Notes:
1. C7 is placed at silkscreen marker ‘2’ and ‘3’ on tqs evalboard or @ 10 deg at 1.85
GHz away from pins 6 and 7.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
22
23
24
25
26
27
28
1800
1820
1840
1860
1880
1900
Frequency (MHz)
S
21
(dB
)
+25°C
-40°C
+85°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1800
1820
1840
1860
1880
1900
Frequency (MHz)
S1
1
(dB
)
+25°C
-40°C
+85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1800
1820
1840
1860
1880
1900
Frequency (MHz)
S2
2
(dB
)
+25°C
-40°C
+85°C
OIP3 vs. Frequency
+25° C, +15 dBm/tone
35
40
45
50
55
1800
1820
1840
1860
1880
1900
Frequency (MHz)
OI
P
3
(dB
m
)
2
2.7 pF
DNP
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相关代理商/技术参数 |
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| AH212-S8PCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 26dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
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