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参数资料
| 型号： | AH2 |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | TO-243C, SOT-89, 4 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 551K |
| 代理商： | AH2 |
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 3 of 6 June 2005
AH2
High Dynamic Range Amplifier
Product Information
The Communications Edge TM
Single – Ended CATV 75
: Evaluation Circuit: 50 – 860 MHz (AH2-PCB)
Typical RF Performance at 25
qC
Frequency
MHz
50
450
860
S21 – Gain
dB
14.5
13.2
S11 – Input R.L.
dB
-11.1 -12.7 -18.3
S22 – Output R.L.
dB
-9.5
-22.9 -10.6
Output IP2
(+5 dBm)
dBm
52.7
53.5
52.5
Output IP3
(+5 dBm / tone, 10 MHz spacing)
dBm
39.8
40.7
40.8
Noise Figure
dB
3.9
3.1
3.2
Device Bias
+5V @ 150mA
CTB
dBc
-71
CSO
dBc
-48
XMOD
dBc
-65
77 channels, 50-550MHz, +34dBmV/channel flat loading
IND
ID=L1
L=12 nH
IND
ID=L3
L=270 nH
CAP
ID=C4
C=1000 pF
CAP
ID=C3
C=1000 pF
CAP
ID=C1
C=1000 pF
CAP
ID=C2
C=2.2 pF
SUBCKT
ID=S1
NET="AH2"
PORT
P=1
Z=75 Ohm
PORT
P=2
Z=75 Ohm
+5 V
Circuit Board Material: .062” total thickness with a .028” FR-4 top RF layer, 4 layers (other
layers added for rigidity), 1 oz copper, 75 Microstrip.
Linearityvs. Frequency
0
10
20
30
40
50
60
0
200
400
600
800
1000
Frequency(MHz)
In
te
rc
ep
tP
oi
nt
(d
B
m
)
OIP3
OIP2
Input/OutputReturnLoss
andIsolation
-30
-20
-10
0
200
400
600
800
1000
Frequency(MHz)
M
ag
ni
tu
de
(d
B
)
S11
S12
S22
Gain
13
13.5
14
14.5
15
15.5
16
0
200
400
600
800
1000
Frequency(MHz)
M
ag
ni
tu
de
(d
B
)
S21-40C S2125C S2185C
CTB,CSO,andXMODVs.Frequency
-80
-70
-60
-50
-40
0
100
200
300
400
500
600
Frequency(MHz)
dB
c
CTB
CSO
XMOD
77ChannelFlatLoading,+34dBmV/Ch.
NoiseFigure
0
1
2
3
4
5
0
200
400
600
800
1000
Frequency(MHz)
N
oi
se
Fi
gu
re
(d
B
)
IP2andIP3vs. Power Out at 450MHz
25
30
35
40
45
50
55
-4
-2
0
2
4
6
8
10
Output power (dBm)
In
te
rc
ep
tP
oi
nt
(d
B
m
)
IP2
IP3
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