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参数资料
| 型号： | AK5324096W4K |
| 厂商： | Accutek Microcircuit Corporation |
| 英文描述： | 4,194,304 Word by 32 Bit CMOS Dynamic Random Access Memory |
| 中文描述： | 4194304字由32位CMOS动态随机存取存储器 |
| 文件页数： | 1/2页 |
| 文件大小： | 73K |
| 代理商： | AK5324096W4K |
DESCRIPTION
The Accutek AK5324096W high density memory module is a
CMOSDynamicRAMorganizedin4096Kx32bitwords. Themod-
uleconsistsofeightstandard4Megx4DRAMsinplasticSOJpack-
ages mounted on the front surface of a printed circuit board with a
low profile height of only 0.875" in a 72 pin leadless SIM configura-
tion. This configuration allows socket-mounting of large quantities
of memory in applications where high density and ease of inserting
additional memory are important.
The operation of the AK5324096W is identical to eight 4 Meg x 4
drams. There are four
CAS
lines and two
RAS
lines. Independent
bytecontrolisaccomplishedbyfour
CAS
lines. Eachseparate
CAS
line controls two of the 4 Meg x 4 DRAMs to form an 8 bit byte. The
bank of 32 bits is controlled by the two
RAS
lines. A sixteen bit data
path can be produced by connecting DQ
0
to DQ
16
, DQ
1
to DQ
17
,
etc. and alternately strobing RAS
0
with RAS
2
.
FEATURES
4,194,304 x 32 bit organization
Low profile board height of 0.875 inch
72 pad Single In-Line Module
Multiple
CAS
and
RAS
lines allow x16 or x32 bit widths
Power
5.28 Watt Max Active (60nS)
4.40 Watt Max Active (70 nS)
44 mW Max Standby
CAS
-before-
RAS
,
RAS
-only or hidden refresh
Single 5 Volt Power Supply
2048 Refresh Cycles, 32 mSEC
Available in Fast Page Mode and EDO
Available in leadless SIM or leaded ZIP versions
Downward compatible with AK5322048W, AK5321024W,
AK532512W and AK536256W
Upward compatible with AK5328192W, AK53216384 and
AK53232768
Operating free air temperature 0
0
C to 70
0
C
ADDITIONAL OPTIONS AVAILABLE
4 Meg x 32 version, using 4K Refresh Drams, AK5324096W4K
Accutek
Microcircuit
Corporation
AK5324096W
4,194,304 Word by 32 Bit CMOS
Dynamic Random Access Memory
+
+
72
1
PIN NOMENCLATURE
A
0
- A
10
Address Inputs
DQ
0
- DQ
31
Data In/Data Our
CAS
0
- CAS
3
Column Address Strobe
RAS
0
, RAS
2
Row Address Strobe
WE
Write Enable
OE
Output Enable
PD
1
- PD
4
Presence Detect
Vcc
5v Supply
Vss
Ground
NC
No Connect
MODULE OPTIONS
Leadless SIM: AK5324096W
Leaded ZIP: AK5324096Z
PIN ASSIGNMENT
PIN #
SYMBOL
PIN #
SYMBOL
PIN #
SYMBOL
PIN #
SYMBOL
1
Vss
19
A10
37
NC
55
DQ11
2
DQ0
20
DQ4
38
NC
56
DQ27
3
DQ16
21
DQ20
39
Vss
57
DQ12
4
DQ1
22
DQ5
40
CAS0
58
DQ28
5
DQ17
23
DQ21
41
CAS2
59
Vcc
6
DQ2
24
DQ6
42
CAS3
60
DQ29
7
DQ18
25
DQ22
43
CAS1
61
DQ13
8
DQ3
26
DQ7
44
RAS0
62
DQ30
9
DQ19
27
DQ23
45
NC
63
DQ14
10
Vcc
28
A7
46
NC
64
DQ31
11
NC
29
NC
47
WE
65
DQ15
12
A0
30
Vcc
48
NC
66
NC
13
A1
31
A8
49
DQ8
67
PD1
14
A2
32
A9
50
DQ24
68
PD2
15
A3
33
NC
51
DQ9
69
PD3
16
A4
34
RAS2
52
DQ25
70
PD4
17
A5
35
NC
53
DQ10
71
NC
18
A6
36
NC
54
DQ26
72
Vss
Presence Detect -
-60
-70
PD1
Vss
Vss
PD2
NC
NC
PD3
NC
Vss
PD4
NC
NC
相关PDF资料 |
PDF描述 |
|---|---|
| AK5362048W | 524,288 Word by 36 Bit CMOS Dynamic Random Access Memory |
| AK536512Z | 524,288 Word by 36 Bit CMOS Dynamic Random Access Memory |
| AK5364096D | 32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
| AK5364096G | 32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
| AK5364096S | 32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AK5324096WP-60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 Fast Page Mode DRAM Module |
| AK5324096WP-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 Fast Page Mode DRAM Module |
| AK5324096Z | 制造商:ACCUTEK 制造商全称:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:4,194,304 Word by 32 Bit CMOS Dynamic Random Access Memory |
| AK532512 | 制造商:ACCUTEK 制造商全称:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:262,144 Word by 32 Bit CMOS Dynamic Random Access Memory |
| AK532512W | 制造商:ACCUTEK 制造商全称:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:262,144 Word by 32 Bit CMOS Dynamic Random Access Memory |
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