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参数资料
| 型号： | AK64256S |
| 厂商： | Accutek Microcircuit Corporation |
| 英文描述： | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| 中文描述： | 262,144 × 8位马鞍山动态随机存取存储器 |
| 文件页数： | 1/2页 |
| 文件大小： | 111K |
| 代理商： | AK64256S |
DESCRIPTION
The Accutek AK48256 high density memory modules is a random
access memory organized in 256K x 8 bit words. The assembly
consists of eight standard 256K x 1 DRAMs in plastic leaded chip
carriers (PLCC) mounted on the front side of a printed circuit board.
Themodulecanbeconfiguredasaleadless30padSIMoraleaded
30 pin SIP. This packaging approach provides a 6 to 1 density in-
crease over standard DIP packaging.
TheoperationoftheAK48256isidenticaltoeight256Kx1DRAMs.
The data input is tied to the data output and brought out separately
for each device, with common RAS, CAS and WE control. This
commonI/Ofeaturedictatestheuseofearly-writecyclestoprevent
contentionofDandQ. SincetheWrite-Enable(WE)signalmustal-
ways go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
FEATURES
262,144 by 8 bit organization
Optional 30 Pad leadless SIM (Single In-Line Module) or 30
Pin leaded SIP (Single In-Line Package)
JEDEC standard pinout
Each device has common D and Q lines with common RAS,
CAS and WE control
2.8 Watt active and 180 mW standby (max)
Operating free air temperature 0
0
C to 70
0
C
Upward compatible with AK481024, AK581024, AK584096 and
AK5816384
Functionally and Pin compatible with AK58256A
Accutek
Microcircuit
Corporation
AK48256S / AK48256G
262,144 X 8 Bit MOS
Dynamic Random Access Memory
1
30
1
Front View
30-Pin SIM
30-Pin SIP
PIN NOMENCLATURE
A
0
- A
8
Address Inputs
DQ
1
- DQ
8
Data In / Data Out
CAS
Column Address Strobe
RAS
Row Address Strobe
WE
Write Enable
Vcc
5v Supply
Vss
Ground
NC
No Connect
MODULE OPTIONS
Leadless SIM: AK48256S
Leaded SIP: AK48256G
PIN ASSIGNMENT
PIN #
SYMBOL
PIN #
SYMBOL
1
Vcc
16
DQ5
2
CAS
17
A8
3
DQ!
18
NC
4
A0
19
NC
5
A1
20
DQ6
6
DQ2
21
WE
7
A2
22
Vss
8
A3
23
DQ7
9
Vss
24
NC
10
DQ3
25
DQ8
11
A4
26
NC
12
A5
27
RAS
13
DQ4
28
NC
14
A6
29
NC
15
A7
30
Vcc
FUNCTIONAL DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| AK64256W | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK64256Z | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK644096D | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK644096G | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK644096S | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AK64256W | 制造商:ACCUTEK 制造商全称:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
| AK64256Z | 制造商:ACCUTEK 制造商全称:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
| AK6-430C | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS 6KA RATED 430V BI AXIAL RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| AK6-430C-12 | 功能描述:TVS DIODE 430VWM 625VC AXIAL 制造商:littelfuse inc. 系列:AK6 包装:散装 零件状态:有效 类型:齐纳 单向通道:- 双向通道:1 电压 - 反向关态（典型值）:430V 电压 - 击穿（最小值）:440V 电压 - 箝位（最大值）@ Ipp:625V 电流 - 峰值脉冲（10/1000μs）:6000A（6kA）（8/20μs） 功率 - 峰值脉冲:- 电源线路保护:无 应用:通用 不同频率时的电容:1nF @ 10kHz 工作温度:-55°C ~ 125°C（TJ） 安装类型:通孔 封装/外壳:轴向，直角弯曲（24.15mm 中心） 供应商器件封装:轴向 标准包装:12 |
| AK6-430C-BP | 制造商:Micro Commercial Components (MCC) 功能描述:TVS DIODE 430VWM 625VC AXIAL |
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