参数资料
型号: AL01Z
元件分类: 参考电压二极管
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE
封装: AXIAL PACKAGE-2
文件页数: 3/3页
文件大小: 102K
代理商: AL01Z
RX 10Z
0
Overcurrent Cycles
1
IFMS Rating
5
Peak
For
ward
Surge
Current
I
FSM
(A)
50
10
20ms
30
10
20
FMX-G26S
MP3-306
MPL-102S
MP2-202S
0
Overcurrent Cycles
1
IFMS Rating
5
Peak
For
ward
Surge
Current
I
FSM
(A)
50
10
40
20ms
100
80
20
60
0
Overcurrent Cycles
1
IFMS Rating
5
Peak
For
ward
Surge
Current
I
FSM
(A)
50
10
20ms
180
160
140
120
100
80
60
40
20
0
Overcurrent Cycles
1
IFMS Rating
5
Peak
For
ward
Surge
Current
I
FSM
(A)
50
10
20ms
65
60
50
40
30
20
10
0
Overcurrent Cycles
1
IFMS Rating
5
Peak
For
ward
Surge
Current
I
FSM
(A)
50
10
20ms
110
100
80
60
40
20
80
03
12
4
0.001
0.01
0.1
1
10
100
Forward
Current
I
F
(A)
Forward Voltage VF (V)
VF —IF Characteristics
VR=200V
80
130
140
90
100
110
120
150
0
1.0
0.5
1.5
2.0
Average
Forward
Current
I
F
(AV)
(A)
t
T
Tj=150
°C
Sinewave
t / T=1/6
t / T=1/2
t / T=1/3
D.C.
Ta=150
°C
125
°C
100
°C
60
°C
25
°C
0
0.5
1.0
1.5
2.0
2.5
0.001
0.01
0.1
1
10
100
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF —IF Characteristics (Typical)
VR=600V
0
50
100
150
0
2
4
6
8
10
Average
Forward
Current
I
F
(AV)
(A)
Case Temperature Tc (
°C)
Tc— IF (AV) Derating
Ta=150
°C
100
°C
60
°C
25
°C
t
T
Tj=150
°C
Sinewave
t / T=1/6
t / T=1/2
t / T=1/3
D.C.
0
0.5
1.0
1.5
2.0
2.5
0.001
0.01
0.1
1
10
100
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF —IF Characteristics (Typical)
t
T
Tj=150
°C
VR=600V
0
50
100
150
0
5
10
15
20
25
30
Average
Forward
Current
I
F
(AV)
(A)
Case Temperature Tc (
°C)
Tc— IF (AV) Derating
Ta=150
°C
100
°C
60
°C
R.T
t / T=1/ 3, Sinewave
t / T=1/6
t / T=1/2
D.C.
t / T=1/2
D.C.
0
100
200
400
500
300
600
0
0.05
0.10
0.15
0.20
0.25
Reverse
Power
Loss
P
R
(W)
Reverse Voltage
VR (V)
VR—PR Characteristics
1-t / T=2/ 3, Sinewave
1-t / T=5/6
Under development
IF(AV)—PF Characteristics
Average Forward Current IF(AV) (A)
Forward
Power
Loss
P
F
(W)
Average
Forward
Current
I
F
(AV)
(A)
0.0
0.3
0.6
0.9
1.5
1.2
1.8
0.001
0.01
0.1
10
1
100
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF —IF Characteristics (Typical)
t / T=1/6
t / T=1/2
D.C.
t / T=1/ 3, Sinewave
t
T
Tj=150
°C
t / T=1/6
t / T=1/2
t / T=1/ 3, Sinewave
D.C.
Average Forward Current IF(AV) (A)
0
15
20
15
30
25
Forward
Power
Loss
P
F
(W)
05
10
5
50
130
90
70
110
150
0
15
10
5
20
Average
Forward
Current
I
F
(AV)
(A)
Case Temperature Tc (
°C)
IF(AV)—PF Characteristics
Tc— IF (AV) Derating
VF —IF Characteristics (Typical)
0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
10
1
100
Forward Voltage VF (V)
Forward
Current
I
F
(A)
Ta=150
°C
125
°C
100
°C
60
°C
25
°C
Tj=150
°C
T
t
Ta=150
°C
100
°C
60
°C
25
°C
Characteristic Curves
Ultra-Fast-Recovery Rectifier Diodes
T — IF(AV) Characteristics
IFSM
(A)
IFSM
(A)
IFSM
(A)
Lead Temperature T (
°C)
Lead Temperature T (
°C)
IFSM
(A)
IFSM
(A)
t
T
Tj=150
°C
D.C.
t / T=1/6
t / T=1/2
t / T=1/ 3, Sinewave
130
140
90
120
110
100
150
0
6.0
4.0
2.0
8.0
10.0
t / T=1/6
t / T=1/2
D.C.
t / T=1/ 3, Sinewave
0
68
10
6
8
16
14
12
10
02
4
2
4
Tj=150
°C
T
t
相关PDF资料
PDF描述
A12FL20MS02PBF 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA
A12FLR40MS05PBF 12 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
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