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| 型号： | AL5802-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | IC LED DRVR LINEAR 30V SOT26 |
| 标准包装： | 1 |
| 拓扑： | 线性，PWM |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 通用 |
| 电源电压： | 4.5 V ~ 30 V |
| 输出电压： | 0.8 V ~ 30 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 125°C |
| 其它名称： | AL5802-7DIDKR |
AL5802
Package Thermal Data
Characteristic
Power Dissipation (Note 5) @ T A = +25°C
Power Dissipation (Note 6) @ T A = +25°C
Power Dissipation (Note 7) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 7) @ T A = +25°C
Notes:
5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
Symbol
P D
R θ JA
Value
0.37
0.87
1
335
143
120
Unit
W
°C/W
6. Device mounted on 25mm x 25mm 2oz copper board.
7. Device mounted on 50mm x 50mm 2oz copper board.
Recommended Operating Conditions
Symbol
V BIAS
V OUT
I LED
T A
Parameter
Supply voltage range
OUT voltage range
LED pin current (Note 8)
Operating ambient temperature range
Min
4.5
0.8
10
-40
Max
30
30
120
+125
Unit
V
mA
°C
Note:
8. Subject to ambient temperature, power dissipation and PCB.
Electrical Characteristics – NPN Transistor – Q1 (@T A = +25°C, unless otherwise specified.)
Symbol
V (BR)CEO
V (BR)EBO
I CEX
I BL
Characteristic
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
Test Condition
I C = 1.0mA, I B = 0
I E = 10μA, I C = 0
V CE = 30V, V EB(OFF) = 3.0V
V CE = 30V, V EB(OFF) = 3.0V
Min
40
6.0
—
—
Typ
—
—
—
—
Max
—
—
50
50
Unit
V
V
nA
nA
I C = 100μA, V CE = 1.0V
40
—
—
h FE
V CE(SAT)
V BE(SAT)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage
I C = 1.0mA, V CE = 1.0V
I C = 10mA, V CE = 1.0V
I C = 10mA, I B = 1.0mA
I C = 10mA, I B = 1.0mA
70
100
—
0.65
—
—
—
—
—
300
0.20
0.85
—
V
V
Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@T A = +25°C, unless otherwise specified.)
Symbol
V (BR)CBO
V (BR)CEO
V (BR)EBO
I CBO
I EBO
V CE(SAT)
h FE
R 1
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 9)
DC Current Gain (Note 9)
Input Resistance
Test Condition
I C = 50 μ A, I E = 0
I C = 1mA, I B = 0
I E = 50 μ A, I C = 0
V CB = 30V, I E = 0
V EB = 4V, I C = 0
I C = 10mA, I B = 1mA
V CE = 5V, I C = 150mA
—
Min
30
30
5.0
—
—
—
100
7
Typ
—
—
—
—
—
—
—
10
Max
—
—
—
0.5
0.5
0.3
—
13
Unit
V
V
V
μA
μA
V
—
k ?
*Characteristics of transistor only.
Note:
9. Short duration pulse test used to minimize self-heating effect.
AL5802
Document number: DS35516 Rev. 9 - 2
3 of 11
www.diodes.com
March 2014
? Diodes Incorporated
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