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参数资料
| 型号： | ALD1101BPA |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | DUAL N-CHANNEL MATCHED MOSFET PAIR |
| 中文描述： | 双N沟道MOSFET的一对匹配 |
| 文件页数： | 4/4页 |
| 文件大小： | 29K |
| 代理商： | ALD1101BPA |
ALD1101A/ALD1101B
Advanced Linear Devices
4
ALD1101
相关PDF资料 |
PDF描述 |
|---|---|
| ALD1101DA | DUAL N-CHANNEL MATCHED MOSFET PAIR |
| ALD1101PA | Circular Connector; No. of Contacts:100; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No |
| ALD1101SA | Circular Connector; No. of Contacts:100; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No |
| ALD1102 | Circular Connector; No. of Contacts:55; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-55 RoHS Compliant: No |
| ALD1102A | Circular Connector; No. of Contacts:55; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-55 RoHS Compliant: No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1101BPAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1101BSAL | 功能描述:MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1101DA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL MATCHED MOSFET PAIR |
| ALD1101MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 13.2V V(BR)DSS | TO-99 |
| ALD1101PA | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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