参数资料
型号: ALD1103SBL
厂商: Advanced Linear Devices Inc
文件页数: 2/9页
文件大小: 0K
描述: MOSFET 2N+2P 13.2V 14-SOIC
标准包装: 25
FET 型: 2 个 N 通道和 2 个 P 通道(H 桥式)
FET 特点: 标准
漏极至源极电压(Vdss): 13.2V
电流 - 连续漏极(Id) @ 25° C: 40mA,16mA
开态Rds(最大)@ Id, Vgs @ 25° C: 75 欧姆 @ 5V
Id 时的 Vgs(th)(最大): 1V @ 10µA
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOIC
包装: 管件
其它名称: 1014-1009
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V DS
Gate-source voltage, V GS
10.6V
10.6V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
SBL, PBL packages
DB package
500mW
0 ° C to +70 ° C
-55 ° C to +125 ° C
-65 ° C to +150 ° C
+260 ° C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T A = 25 ° C unless otherwise specified
N - Channel
Test
P - Channel
Test
Parameter
Symbol Min Typ Max
Unit
Conditions
Min Typ Max
Unit
Conditions
Gate Threshold V T
0.4
0.7
1.0
V
I DS = 10 μ A V GS = V DS
-0.4
-0.7
-1.2
V
I DS = -10 μ A V GS = V DS
Voltage
Offset Voltage
V OS
10
mV
I DS = 100 μ A V GS = V DS
10
mV
I DS = -100 μ A V GS = V DS
V GS1 - V GS2
Gate Threshold
Temperature TC VT
-1.2
mV/ ° C
-1.3
mV/ ° C
Drift
On Drain
I DS (ON)
25
40
mA
V GS = V DS = 5V
-8
-16
mA
V GS = V DS = -5V
Current
Trans-.
G fs
5
10
mmho
V DS = 5V I DS = 10mA
2
4
mmho
V DS = -5V I DS = -10mA
conductance
Mismatch
? G fs
0.5
%
0.5
%
Output
G OS
200
μ mho
V DS = 5V I DS = 10mA
500
μ mho
V DS = -5V I DS = -10mA
Conductance
Drain Source
R DS(ON)
50
75
?
V DS = 0.1V V GS = 5V
180
270
?
V DS = -0.1V V GS = -5V
ON Resistance
Drain Source
ON Resistance ? R DS(ON)
0.5
%
V DS = 0.1V V GS = 5V
0.5
%
V DS = -0.1V V GS = -5V
Mismatch
Drain Source
Breakdown
BV DSS
12
V
I DS = 10 μ A V GS =0V
-12
V
I DS = -10 μ A V GS =0V
Voltage
Off Drain
Current
Gate Leakage
Current
Input
I DS(OFF)
I GSS
C ISS
0.1
1
6
4
4
50
10
10
nA
μ A
pA
nA
pF
V DS =12V I GS = 0V
T A = 125 ° C
V DS = 0V V GS =12V
T A = 125 ° C
0.1
1
6
4
4
50
10
10
nA
μ A
pA
nA
pF
V DS = -12V V GS = 0V
T A = 125 ° C
V DS = 0V V GS =-12V
T A = 125 ° C
Capacitance
ALD1103
Advanced Linear Devices
2 of 9
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