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| 型号： | ALD1105SBL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N+2P 13.2V 14-SOIC |
| 标准包装： | 25 |
| FET 型： | 2 个 N 通道和 2 个 P 通道（H 桥式） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 13.2V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8mA，2mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 管件 |
| 其它名称： | 1014-1011 |
A DVANCED
L INEAR
D EVICES, I NC.
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105
GENERAL DESCRIPTION
APPLICATIONS
The ALD1105 is a monolithic dual N-channel and dual P-channel
complementary matched transistor pair intended for a broad range of
analog applications. These enhancement-mode transistors are
manufactured with Advanced Linear Devices' enhanced ACMOS silicon
gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair
and an ALD1117 P-channel MOSFET pair in one package. The ALD1105
is a low drain current, low leakage current version of the ALD1103.
The ALD1105 offers high input impedance and negative current temperature
coefficient. The transistor pair is matched for minimum offset voltage and
differential thermal response, and it is designed for precision signal
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?
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?
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?
?
?
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Precision current mirrors
Complementary push-pull linear drives
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
Precision matched current sources
switching and amplifying applications in +2V to +12V systems where low
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large (almost
PIN CONFIGURATION
infinite) current gain in a low frequency, or near DC, operating environment.
DN1
1
14
DN2
When used in complementary pairs, a dual CMOS analog switch can be
constructed. In addition, the ALD1105 is intended as a building block for
GN1
2
13
GN2
differential amplifier input stages, transmission gates, and multiplexer
applications.
The ALD1105 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
SN1
V -
DP1
GP1
3
4
5
6
12
11
10
9
SN2
V +
DP2
GP2
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the device
at a drain current of 3mA at 25 ° C is = 3mA/30pA = 100,000,000.
SP1
7
TOP VIEW
8
SP2
SBL, PBL, DB PACKAGES
FEATURES
? Thermal tracking between N-channel and P-channel pairs
? Low threshold voltage of 0.7V for both N-channel &
P-channel MOSFETS
? Low input capacitance
BLOCK DIAGRAM
N GATE 1 (2)
? Low Vos -- 10mV
? High input impedance -- 10 13 ? typical
? Low input and output leakage currents
? Negative current (I DS ) temperature coefficient
? Enhancement mode (normally off)
? DC current gain 10 9
? Matched N-channel and matched P-channel in one package
? RoHS compliant
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
N DRAIN 1 (1)
N DRAIN 2 (14)
N SOURCE 1 (3)
SUBSTRATE (4)
N SOURCE 2 (12)
N GATE 2 (13)
P GATE 1 (6)
0 ° C to +70 ° C
14-Pin
Small Outline
Package (SOIC)
ALD1105SBL
0 ° C to +70 ° C
14-Pin
Plastic Dip
Package
ALD1105PBL
-55 ° C to +125 ° C
14-Pin
CERDIP
Package
ALD1105DB
P DRAIN 1 (5)
P DRAIN 2 (10)
P SOURCE 1 (7)
SUBSTRATE (11)
P SOURCE 2 (8)
* Contact factory for leaded (non-RoHS) or high temperature versions.
P GATE 2 (9)
Rev 2.0 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1106 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY |
| ALD1106_12 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY |
| ALD1106DB | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY |
| ALD1106PB | 功能描述:MOSFET Quad N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1106PBL | 功能描述:MOSFET Quad N-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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