参数资料
型号: ALD1107PBL
厂商: Advanced Linear Devices Inc
文件页数: 4/11页
文件大小: 0K
描述: MOSFET 4P-CH 13.2V QUAD 14PDIP
标准包装: 50
FET 型: 4 P 通道(半桥)
FET 特点: 标准
漏极至源极电压(Vdss): 13.2V
电流 - 连续漏极(Id) @ 25° C: 2mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1800 欧姆 @ 5V
Id 时的 Vgs(th)(最大): 1V @ 1µA
功率 - 最大: 500mW
安装类型: 通孔
封装/外壳: 14-DIP(0.300",7.62mm)
供应商设备封装: 14-PDIP
包装: 管件
其它名称: 1014-1014
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
1/2 ALD1107
or ALD1117
1/2 ALD1107
or ALD1117
V+ = +5V
V+ = +5V
I SET
R SET
Q 3
Q 4
Q 3
Q 4
I SOURCE
Digital Logic Control
I SET
R SET
I SOURCE
of Current Source
Q 1
1/2 ALD1106
or ALD1116
Q 1 , Q 2 : N - Channel MOSFET
Q 2
I SOURCE = I SET
= V+ -Vt
R SET
= ~
4
R SET
ON
OFF
Q 1
1/4 ALD1106
or 1/2 ALD1116
Q 1
: N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
DIFFERENTIAL AMPLIFIER
Q 3, Q 4 : P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
V+
1/2 ALD1107
or ALD1117
V+ = +5V
Q 3
PMOS PAIR
Q 4
I SET
R SET
I SOURCE = I SET x N
V IN +
Q 1
Q 2
NMOS PAIR
V OUT
V IN -
Q SET
Q 1
Q 2
Q 3
Q N
1/2 ALD1106
or ALD1116
Current
Source
Q 1 , Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
Q SET, Q 1 ..Q N : ALD1106 or ALD1116
N - Channel MOSFET
ALD1107/ALD1117
Advanced Linear Devices
4 of 11
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