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参数资料
| 型号： | ALD110908APAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 10.6V DUAL 8PDIP |
| 产品目录绘图： | 8-Pin Plastic Dip Package |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 12mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 4.8V |
| Id 时的 Vgs(th)（最大）： | 820mV @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 其它名称： | 1014-1038 |
e
EPAD
LE
AB
A DVANCED
L INEAR
D EVICES, I NC.
TM
?
D
E N
ALD110808/ALD110808A/ALD110908/ALD110908A
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD?
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.80V
GENERAL DESCRIPTION
ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision
monolithic quad/dual enhancement mode N-Channel MOSFETs matched
at the factory using ALD’s proven EPAD? CMOS technology. These de-
vices are intended for low voltage, small signal applications.
These MOSFET devices are built on the same monolithic chip, so they
exhibit excellent temperature tracking characteristics. They are versatile
as circuit elements and are useful design component for a broad range of
analog applications. They are basic building blocks for current sources,
differential amplifier input stages, transmission gates, and multiplexer
applications. For most applications, connect the V- and IC pins to the most
negative voltage in the system and the V+ pin to the most positive voltage.
All other pins must have voltages within these voltage limits at all times.
ALD110808/ALD110908 devices are built for minimum offset voltage and
differential thermal response, and they are suited for switching and ampli-
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias
current, low input capacitance and fast switching speed are desired. As
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
APPLICATIONS
? Precision current mirrors
? Precision current sources
? Voltage choppers
? Differential amplifier input stage
? Voltage comparator
? Voltage bias circuits
? Sample and Hold
? Analog inverter
? Level shifters
? Source followers and buffers
? Current multipliers
? Analog switches / multiplexers
PIN CONFIGURATION
ALD110808
These devices are suitable for use in precision applications which require
IC*
1
V -
V -
16
IC*
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
G N1
2
15
G N2
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the
device at a drain current of 3mA and input leakage current of 30pA at
25 ° C is = 3mA/30pA = 100,000,000.
FEATURES
? Enhancement-mode (normally off)
D N1
S 12
V -
D N4
G N4
IC*
3
4
5
6
7
8
V -
V -
M1
M4
M2
M3
V +
V -
14
13
12
11
10
9
D N2
V +
S 34
D N3
G N3
IC*
? Standard Gate Threshold Voltages: +0.80V
? Matched MOSFET to MOSFET characteristics
? Tight lot to lot parametric control
SCL, PCL PACKAGES
? Low input capacitance
? V GS(th) match to 2mV and 10mV
? High input impedance — 10 12 ? typical
? Positive, zero, and negative V GS(th) temperature coefficient
? DC current gain >10 8
IC*
1
V-
ALD110908
V-
8
IC*
? Low input and output leakage currents
G N1
2
7
G N2
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
D N1
S 12
3
4
M1
M2
V-
6
5
D N2
V-
0 ° C to +70 ° C 0 ° C to +70 ° C
16-Pin
SOIC
Package
ALD110808ASCL
ALD110808SCL
16-Pin
Plastic Dip
Package
ALD110808APCL
ALD110808PCL
8-Pin
SOIC
Package
ALD110908ASAL
ALD110908SAL
8-Pin
Plastic Dip
Package
ALD110908APAL
ALD110908PAL
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values.
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD110908ASA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110908ASAL | 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD110908PA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110908PAL | 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD110908SA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
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