- 您现在的位置：买卖IC网 > PDF目录18156 > ALD1110EPAL (Advanced Linear Devices Inc)MOSFET N-CH ADJ DUAL 8PDIP PDF资料下载
参数资料
| 型号： | ALD1110EPAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH ADJ DUAL 8PDIP |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10V |
| 电流 - 连续漏极(Id) @ 25° C： | 3mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1µA |
| 功率 - 最大： | 600mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
e
A DVANCED
L INEAR
D EVICES, I NC.
TM
?
EPAD
D
LE
AB
E N
ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD?)
GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPAD? (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are
matched and adjusted (e-trimmed) at the factory resulting in quad/dual
MOSFETs that are highly matched in threshold voltages and other electrical
characteristics. For a given input voltage, the threshold voltage of a
MOSFET device determines its drain on-current, resulting in an on-
resistance characteristic that can be precisely preset and then controlled by
the input voltage very accurately.
Using an ALD1108E/ALD1110E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. Since
BENEFITS
? Precision matched electrically after
packaging
? Simple, elegant single-chip user option
to trim voltage/current values
? Excellent device matching characteristics
with or without additional electrical trim
? Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
ALD1110E
these devices are on the same monolithic chip, they also exhibit excellent
tempco matching characteristics.
These MOSFET devices have very low input currents, and as a result a very
high input impedance (>10 12 Ohm). The gate voltage from a control source
can drive many MOSFET inputs with practically no loading effects. Used in
P N1
G N1
D N1
S 12 , V-
1 EPAD 1
2
3
4
EPAD 2
v+
8
7
6
5
P N2
G N2
D N2
V+
precision current mirror or current multiplier applications, they can be used
to provide a current source over a 100nA to 3mA range, and with either a
positive, negative or zero tempco.
TOP VIEW
SAL, PAL, DA PACKAGES
ALD1108E
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0 ° C to +70 ° C
0 ° C to +70 ° C -55 ° C to +125 ° C
P N1
G N1
D N1
1
2
3
EPAD 1
EPAD 2
16
15
14
P N2
G N2
D N2
8-Pin SOIC
Package
ALD1110ESAL
8-Pin Plastic Dip
Package
ALD1110EPAL
8-Pin CERDIP
Package
ALD1110EDA
S 12
V-
D N4
4
5
6
v-
v+
13
12
11
V+
S 34
D N3
G N4
7
10
G N3
16-Pin SOIC
Package
16-Pin Plastic Dip
Package
16-Pin CERDIP
Package
P N4
8
EPAD 4
EPAD 3
9
P N3
ALD1108ESCL
ALD1108EPCL
ALD1108EDC
TOP VIEW
SCL, PCL, DC PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
ALD1108E
V+(13)
BLOCK DIAGRAM
ALD1110E
V+(5)
P N (1)
D N1 (3)
D N2 (14)
P N2 (16)
P N3 (9)
D N3 (11)
D N4 (6)
P N4 (8)
P N1 (1)
D N1 (3)
D N2 (6)
P N2 (8)
~
~
G N1 (2)
G N2 (15) G N3 (10)
G N4 (7)
G N1 (2)
G N2 (7)
EPAD 1
S 12 (4)
EPAD 2
V- (5)
EPAD 3
S 34 (12)
EPAD 4
EPAD 1
S 12 (4)
EPAD 2
V- (4)
Rev 2.0 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| ABM8-28.375MHZ-B2-T3 | CRYSTAL 28.375 MHZ 18PF SMD |
| ABM8-27.000MHZ-B2-T3 | CRYSTAL 27.000 MHZ 18PF SMD |
| 5424.2253.251 | POWER ENTRY MOD W/ FLTR FELCOM |
| M5D0206S-A | SWITCH ROTARY 2 POLE 6 POS |
| D7G0311N | SWITCH ROTARY 3P-11POS OPEN FRM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1110ESA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩) |
| ALD1110ESAL | 功能描述:MOSFET Dual EPAD(R) Prog RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1115 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET |
| ALD1115_11 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET |
| ALD1115DA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET |
发布紧急采购，3分钟左右您将得到回复。