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参数资料
| 型号： | ALD111933PAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 10.6V 8PDIP |
| 产品目录绘图： | 8-Pin Plastic Dip Package |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5.9V |
| Id 时的 Vgs(th)（最大）： | 3.35V @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 其它名称： | 1014-1051 |
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V DS
Gate-Source voltage, V GS
Power dissipation
Operating temperature range PA, SA, MA package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V- = GND TA = 25 ° C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD111933
10.6V
10.6V
500 mW
0 ° C to +70 ° C
-65 ° C to +150 ° C
+260 ° C
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
Min
3.25
Typ
3.3
Max
3.35
Unit
V
Test Conditions
IDS =1 μ A
VDS = 0.1V
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
VOS
TC ? VOS
TC ? VGS(th)
2
5
-1.7
20
mV
μ V/ ° C
mV ° C
IDS =1 μ A
VDS1 = VDS2
ID = 1 μ A
0.0
+1.6
ID = 20 μ A, VDS = 0.1V
ID = 40 μ A
On Drain Current
IDS (ON)
6.9
mA
VGS = +10.0V
3.0
VGS = + 7.3V
VDS = + 5V
Forward Transconductance
GFS
1.4
mmho
VGS = +7.3V
VDS = +10.4V
Transconductance Mismatch
? GFS
1.8
%
VGS = + 7.3V
Output Conductance
Drain Source On Resistance
GOS
RDS (ON)
68
500
μ mho
?
VDS = +10.4V
VDS = 0.1V
VGS = +5.9V
Drain Source On Resistance
? RDS (ON)
0.5
%
VDS = 0.1V
Mismatch
VGS = +7.3V
Drain Source Breakdown Voltage
BVDSX
10
V
IDS = 1.0 μ A
VGS =+2.3V
Drain Source Leakage Current 1
IDS (OFF)
10
100
pA
VGS = +2.3V
4
nA
VDS =10V, TA = 125 ° C
Gate Leakage Current 1
IGSS
3
30
pA
VDS = 0V VGS = 10V
1
nA
TA =125 ° C
Input Capacitance
Transfer Reverse Capacitance
CISS
CRSS
2.5
0.1
pF
pF
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
ton
toff
10
10
60
ns
ns
dB
V+ = 5V RL= 5K ?
V+ = 5V RL= 5K ?
f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD111933
Advanced Linear Devices
2
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相关代理商/技术参数 |
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| ALD111933SAL | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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